Proceedings ArticleDOI
A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode
Liheng Zhu,Xingbi Chen +1 more
- pp 261-264
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TLDR
In this paper, a reverse-conducting insulated gate bipolar transistor (RC-IGBT) with anti-parallel Shockley diode is proposed to solve the anode-short problem.Abstract:
A novel reverse-conducting insulated gate bipolar transistor (RC-IGBT) with anti-parallel Shockley diode is proposed. By introducing an additional isolated p-n junction at the anode, the effect of anode-short is eliminated, and accordingly, the snapback problem is solved in the novel RC-IGBT. The snapback-free characteristics can be realized in a single cell with a width of less than 10 μm. Besides, the conduction voltages are significantly reduced and the distributions of minority carrier and of current are more uniform than the conventional RC-IGBT, in both the forward and the reverse conduction states. The tradeoff between Eoff and Von in the forward operation case and the tradeoff between Qrr and Von in the reverse operation case are both optimized in this paper.read more
Citations
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Journal ArticleDOI
Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies
E. M. Findlay,Florin Udrea +1 more
TL;DR: This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature and shows that these alternate concepts either present a tradeoff in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.
Journal ArticleDOI
Simulation Study of a Novel Snapback-Free and Low Turn-Off Loss Reverse-Conducting IGBT With Controllable Trench Gate
TL;DR: In this paper, a novel ultra-fast snapback-free controllable trench gate (CTG) reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and investigated by simulation.
Proceedings ArticleDOI
A snapback-free RC-IGBT with Alternating N/P buffers
TL;DR: In this paper, a 1200V-class Reverse Conducting IGBT with Alternating N+/P Buffers (AB) is proposed and its mechanism is investigated for the first time.
Journal ArticleDOI
A Snapback-Free Reverse Conducting Insulated-Gate Bipolar Transistor With Discontinuous Field-Stop Layer
TL;DR: In this paper, a reverse conducting insulator gate bipolar transistor (RC-IGBT) with discontinuous field-stop (DFS) layer is proposed and investigated, which increases the distributed resistance near the collector side in the unipolar mode and eliminates the snapback phenomenon with a reduced half-cell pitch of $60~\mu \text{m}$.
Patent
Semiconductor Device with Insert Structure at a Rear Side and Method of Manufacturing
TL;DR: In this article, a cavity is formed in a first semiconductor layer that is formed on a semiconducting base layer, and a recessed mask lintern is created on a portion of a sidewall of the cavity distant to the process surface.
References
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Proceedings ArticleDOI
The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications
TL;DR: In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented, referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes.
Proceedings ArticleDOI
The radial layout design concept for the Bi-mode insulated gate transistor
TL;DR: In this paper, a radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT) is presented, which shows that the arrangement of the n+stripes plays a key role for the on-state characteristics of the BiGT.
Proceedings Article
A new way to alleviate the RC IGBT snapback phenomenon: The Super Junction solution
TL;DR: In this paper, a semi-SuperJunction IGBT was proposed to improve the on-state vs switching trade-off performance of the IGBT under unipolar current conduction.
Journal ArticleDOI
An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates
Liheng Zhu,Xingbi Chen +1 more
TL;DR: In this paper, a reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with an automatically controlled anode gate is proposed, where a gate on the reverse IGBT is intrinsically off in the forward conduction state and can be automatically turned on in the reverse conduction states.
Proceedings ArticleDOI
Anode Design Variation in 1200-V Trench Field-stop Reverse-conducting IGBTs
TL;DR: In this article, the authors present results on the electrical behavior of 1200-V reverse-conducting IGBTs designed predominantly for soft switching applications, namely its thickness, the field-stop profile and the p-emitter dose, under the additional constraint to improve the behavior also for more severe switching conditions.