A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module
Jianfeng Li,Alberto Castellazzi,Mohd. Amir Eleffendi,Emre Gurpinar,Christopher Mark Johnson,Liam Mills +5 more
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TLDR
In this paper, the authors used the finite-element (FE) model to provide the raw data for establishing the physical resistor-capacitor (RC) network model, where crossheating effects between the MOSFETs are represented with lateral thermal resistors.Abstract:
This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation. The finite-element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical resistor–capacitor (RC) network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the six MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the six MOSFETs under switching frequencies from 5 to 100 kHz which demonstrate the good electrothermal performance of the designed power module.read more
Citations
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Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets
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Reliability Analysis on Power Converter of Switched Reluctance Machine System Under Different Control Strategies
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Design Methodology of DC Power Cycling Test Setup for SiC MOSFETs
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TL;DR: Experimental results show that an accurate measurement can be achieved with the design considerations regarding precise parameter measurement of the device’s parameter, and the practical issues affecting the measurement accuracy in a multiple-phase setup are investigated.
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Online Junction Temperature Extraction of SiC Power mosfet s With Temperature Sensitive Optic Parameter (TSOP) Approach
TL;DR: In this paper, an online junction temperature extraction method is proposed based on the electroluminescence phenomenon of the body diode of SiC power mosfet s, which ascribes to the radiative recombination in the low doped region of the chip.
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Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules
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