A self-consistent analysis of temperature-dependent field-effect measurements in hydrogenated amorphous-silicon thin-film transistors
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In this paper, a self-consistent analysis of the density of gap states profile is presented, where the Meyer-Neldel (MN) rule is properly considered in relation to the nonuniform shift of the Fermi level as induced by the field effect.Abstract:
We calculated a more accurate density of states (DOS) profile from field‐effect (FE) measurements in hydrogenated amorphous silicon thin‐film transistors, taking into account the anomalously changing conductivity prefactor in accordance with the Meyer–Neldel (MN) rule. We present a self‐consistent analysis of the density of gap states profile, where the MN rule is, for the first time, properly considered in relation to the nonuniform shift of the Fermi level as induced by the field effect. Moreover, the calculation yields the correct flat‐band voltage and the corresponding flat‐band activation energy. The determination of conductivity activation energies free from any initial band bending effects is of importance in all types of transport measurements.read more
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The physics of amorphous-silicon thin-film transistors
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Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies
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Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
TL;DR: In this article, the effects of the gate bias and light stress on the resulting a-IZTO fi eld effect transistors were examined in detail, and it was shown that hydrogen impurities including interstitial H and substitutional H can be bistable centers with an electronic deep-to-shallow transition through large lattice relaxation.
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The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors
Kwang Hwan Ji,Ji In Kim,Hong Yoon Jung,Se Yeob Park,Yeon-Gon Mo,Jong Han Jeong,Jang Yeon Kwon,Myung Kwan Ryu,Sang Yoon Lee,Rino Choi,Jae Kyeong Jeong +10 more
TL;DR: In this article, the impact of gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated.
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Generalized transport-band field-effect mobility in disordered organic and inorganic semiconductors
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References
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Electronic processes in non-crystalline materials
TL;DR: The Fermi Glass and the Anderson Transition as discussed by the authorsermi glass and Anderson transition have been studied in the context of non-crystalline Semiconductors, such as tetrahedrally-bonded semiconductors.
Journal ArticleDOI
Reversible conductivity changes in discharge‐produced amorphous Si
D. L. Staebler,C. R. Wronski +1 more
TL;DR: In this paper, a new reversible photoelectronic effect was reported for amorphous Si produced by glow discharge of SiH4, where long exposure to light decreases both the photoconductivity and the dark conductivity.
Journal ArticleDOI
Electronic properties of substitutionally doped amorphous Si and Ge
W. E. Spear,P. G. Le Comber +1 more
TL;DR: In this paper, it was shown that substitutional doping of an amorphous semiconductor is possible and can provide control of the electronic properties over a wide range, which corresponds to a movement of the Fermi level of 1·2 eV.
Journal ArticleDOI
Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon
D.L. Staebler,C. R. Wronski +1 more
TL;DR: In this article, the authors show that long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a•Si':'H). Annealing above ∼150°C reverses the process.