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A Statistical Gate-Delay Model Considering Intra-Gate Variability

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TLDR
A model for calculating statistical gate-delay variation caused by intra-chip and inter-chip variability, which considers the intra-gate variability through the introduction of sensitivity constants is proposed.
Abstract
This paper proposes a model for calculating statistical gate-delay variation caused by intra-chip and inter-chip variability. As the variation of individual gate delays directly influences the circuit-delay variation, it is important to characterize each gate-delay variation accurately. Furthermore, as every transistor in a gate affects the transient characteristics of the gate, it is also necessary to consider the intra-gate variability in the model of gate-delay variation. This effect is not captured in existing statistical delay analyses. The proposed model considers the intra-gate variability through the introduction of sensitivity constants. The accuracy of the model is evaluated, and some simulation results for circuit delay variation are presented.

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Citations
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Estimation of delay variations due to random-dopant fluctuations in nano-scaled CMOS circuits

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References
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Eddie Shoesmith
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TL;DR: In this paper, the matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on several basic circuits.
Journal ArticleDOI

Matching properties of MOS transistors

TL;DR: In this article, the matching properties of the threshold voltage, substrate factor and current factor of MOS transistors have been analyzed and measured, and the matching results have been verified by measurements and calculations on a band-gap reference circuit.
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