Journal ArticleDOI
A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
Krishna Mainali,Awneesh Tripathi,Sachin Madhusoodhanan,Arun Kadavelugu,Dhaval Patel,Samir Hazra,Kamalesh Hatua,Subhashish Bhattacharya +7 more
TLDR
The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/stepdown functionality of a transformer as mentioned in this paper.Abstract:
The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems.read more
Citations
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Journal ArticleDOI
Research on Single-Stage High-Frequency-Link SST Topology and Its Optimization Control
TL;DR: In this paper, a new single-stage high-frequency-link based single-phase transformer (SST) topology was proposed and an optimized hybrid control analysis for reducing the average conduction current of insulated gate bipolar transistor and inductor was performed.
Journal ArticleDOI
Changes and challenges of photovoltaic inverter with silicon carbide device
TL;DR: The future requirements of PV inverters on efficiency, power density, reliability, and cost are proposed, and some research trends on SiC-based PV inverter are presented.
Proceedings ArticleDOI
Isolation design considerations for power supply of medium voltage silicon carbide gate drivers
TL;DR: In this paper, two system insulation designs, single and double PCBs, were derived for lower and higher power electronics systems respectively, respectively, and tested with 64 kV impulse and 32 kV overvoltage with only improved transformers showing positive results.
Proceedings ArticleDOI
Practical Design Considerations for MV LCL Filter Under High dv/dt Conditions Considering the Effects of Parasitic Elements
TL;DR: In this paper, the effect of high dv/dt on the filter and the effectiveness of the proposed solution are validated using simulation and experimental data is also provided to validate the proposed concept.
Proceedings ArticleDOI
A High-Speed Gate Driver with PCB-Embedded Rogowski Switch-Current Sensor for a 10 kV, 240 A, SiC MOSFET Module
TL;DR: A smart gate driver design for a 10 kV, 240 A SiC MOSFET module that combines a high-current booster stage and high-bandwidth PCB-embedded Rogowski switch-current sensors for the paralleled submodules to maximize its performance.
References
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Journal ArticleDOI
A three-phase soft-switched high power density DC/DC converter for high power applications
TL;DR: In this paper, three DC/DC converter topologies suitable for high power-density high power applications are presented, which operate in a soft-switched manner, making possible a reduction in device switching losses and an increase in switching frequency.
Book
High-Power Converters and AC Drives
TL;DR: In this article, the authors present a model for high-power switchings with SCR rectifiers and demonstrate how to use SCR Rectifiers to control high power switchings.
Journal ArticleDOI
Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters
Sachin Madhusoodhanan,Awneesh Tripathi,Dhaval Patel,Krishna Mainali,Arun Kadavelugu,Samir Hazra,Subhashish Bhattacharya,Kamalesh Hatua +7 more
TL;DR: In this article, a transformerless intelligent power substation (TIPS) is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid.
Journal ArticleDOI
Smart grid technologies
TL;DR: Development of 15-kV SiC IGBTs and their impact on utility applications is discussed, and the need for power semiconductor devices with high-voltage, high- frequency, and high-temperature operation capability is growing.