Journal ArticleDOI
A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT
Krishna Mainali,Awneesh Tripathi,Sachin Madhusoodhanan,Arun Kadavelugu,Dhaval Patel,Samir Hazra,Kamalesh Hatua,Subhashish Bhattacharya +7 more
TLDR
The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/stepdown functionality of a transformer as mentioned in this paper.Abstract:
The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems.read more
Citations
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Journal ArticleDOI
A Gate Drive With Power Over Fiber-Based Isolated Power Supply and Comprehensive Protection Functions for 15-kV SiC MOSFET
TL;DR: In this paper, a 15kV silicon carbide (SiC) MOSFET gate drive is presented, which features high commonmode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions.
Journal ArticleDOI
Overview of Silicon Carbide Technology: Device, Converter, System, and Application
Fei Wang,Zheyu Zhang +1 more
TL;DR: In this paper, the benefits of silicon carbide (SiC) based power electronics for converters and systems, as well as their ability in enabling new applications are discussed, and challenges and research trends on the design and application of SiC power electronics are also discussed.
Journal ArticleDOI
Voltage Balance Control Based on Dual Active Bridge DC/DC Converters in a Power Electronic Traction Transformer
TL;DR: In this paper, a voltage balance control strategy based on dual active bridge (DAB) dc/dc converters in a power electronic traction transformer (PETT) is proposed.
Journal ArticleDOI
A Digital Predictive Current-Mode Controller for a Single-Phase High-Frequency Transformer-Isolated Dual-Active Bridge DC-to-DC Converter
TL;DR: This paper presents predictive current-mode control for a single-phase high-frequency transformer-isolated dual-active bridge dc-to-dc converter and demonstrates that the application of the predictive control algorithm can remove transient dc offset from the current in high- frequencies isolation transformer within one switching cycle.
Journal ArticleDOI
Power Routing in Modular Smart Transformers: Active Thermal Control Through Uneven Loading of Cells
TL;DR: In the current configuration, transformers are passive devices that do not enable dc systems to connect or interface the electric grid with other energy grids.
References
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Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Proceedings ArticleDOI
10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications
Mrinal K. Das,Craig Capell,David Grider,Scott Leslie,John Ostop,Ravi Raju,Michael Joseph Schutten,Jeffrey Joseph Nasadoski,Allen R. Hefner +8 more
TL;DR: The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes as mentioned in this paper.
Journal ArticleDOI
Dynamic and Balanced Control of Three-Phase High-Power Dual-Active Bridge DC–DC Converters in DC-Grid Applications
TL;DR: In this article, the dynamic behavior of a three-phase dual-active bridge (DAB) is analyzed and a dynamic control strategy is developed, and a compensation technique is implemented to compensate unbalanced transformer phase currents.
Proceedings ArticleDOI
An actively cooled high power, high frequency transformer with high insulation capability
TL;DR: In this paper, an actively cooled high power, high frequency transformer with high insulation capability for use in a high power multilevel converter is discussed, which is designed for a power level of 350 kW and is realized with amorphous core material and coaxial windings.
Proceedings ArticleDOI
Medium frequency transformers for solid-state-transformer applications — Design and experimental verification
TL;DR: In this paper, an analytical description of the limiting factors and the connection between frequency/power rating and the available core and copper conductor technology on the power density and efficiency of medium-frequency transformers is presented.