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Ambipolar Landau levels and strong band-selective carrier interactions in monolayer WSe2.

TLDR
The Zeeman splitting in the VB is several times higher than the cyclotron energy, far exceeding the predictions of a single-particle model and, moreover, tunes significantly with doping, suggesting that ML WSe2 can serve as a host for new correlated-electron phenomena.
Abstract
Monolayers (MLs) of transition-metal dichalcogenides (TMDs) exhibit unusual electrical behaviour under magnetic fields due to their intrinsic spin–orbit coupling and lack of inversion symmetry1–15. Although recent experiments have also identified the critical role of carrier interactions within these materials11,15, a complete mapping of the ambipolar Landau level (LL) sequence has remained elusive. Here we use single-electron transistors (SETs)16,17 to perform LL spectroscopy in ML WSe2, and provide a comprehensive picture of the electronic structure of a ML TMD for both electrons and holes. We find that the LLs differ notably between the two bands, and follow a unique sequence in the valence band (VB) that is dominated by strong Zeeman effects. The Zeeman splitting in the VB is several times higher than the cyclotron energy, far exceeding the predictions of a single-particle model and, moreover, tunes significantly with doping15. This implies exceptionally strong many-body interactions, and suggests that ML WSe2 can serve as a host for new correlated-electron phenomena. Measurements of the chemical potential in a monolayer of WSe2 using a single electron transistor sensing scheme allows for the exact mapping of the level spacing of Landau levels of monolayer WSe2 in the conductance and valence bands.

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Citations
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Journal ArticleDOI

Disorder in van der Waals heterostructures of 2D materials

TL;DR: The progress in disorder control for graphene and TMDs is discussed, as well as in van der Waals heterostructures realized by combining these materials with hexagonal boron nitride.
Journal ArticleDOI

Light–valley interactions in 2D semiconductors

TL;DR: In this paper, the basic valley dependent properties and their experimental demonstrations in single-layer semiconductor transition metal dichalcogenides (TMDs) with an emphasis on the effects of band topology and light-valley interactions are reviewed.
Journal ArticleDOI

Evidence of high-temperature exciton condensation in two-dimensional atomic double layers.

TL;DR: In this article, the authors studied electroluminescence in two-dimensional atomic double layers of transition metal chalcogenides and showed that the interlayer tunnelling current depends only on the exciton density.
Journal ArticleDOI

Evidence of high-temperature exciton condensation in 2D atomic double layers

TL;DR: In this article, electrically generated interlayer excitons in MoSe2/WSe2 atomic double layers with density up to 10^12 cm-2 were studied and it was shown that strong electroluminescence (EL) arises when a hole tunnels from WSe2 to recombine with an electron.
References
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A and V.

Journal ArticleDOI

Atomically thin MoS2: a new direct-gap semiconductor

TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

TL;DR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.
Journal ArticleDOI

Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals

TL;DR: In this paper, the authors reported the experimental discovery of intrinsic ferromagnetism in Cr 2 Ge 2 Te 6 atomic layers by scanning magneto-optic Kerr microscopy.
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