Journal ArticleDOI
Analysis of nonideal Schottky and p‐n junction diodes—Extraction of parameters from I–V plots
TLDR
In this article, two novel methods of determining nonideal Schottky and pn junction diodes parameters from I-V plots were proposed, including the series resistance, saturation current, and bias dependent ideality factor.Abstract:
We propose two novel methods of determining nonideal Schottky and p‐n junction diodes parameters from I–V plots. The series resistance Rs, saturation current Is, as well as the bias‐dependent ideality factor n(V), can be obtained from two successive I–V measurements—one solely of the diode and the other with an external resistance added in series with the measured diode. Our analysis confirms that the methods produce accurate and reliable results even when the conventional techniques fail, such as when we have strongly varying function n(V) in the presence of series resistance and an experimental noise.read more
Citations
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Journal ArticleDOI
Solar cell parameter extraction using genetic algorithms
TL;DR: In this paper, a technique based on genetic algorithms is proposed for improving the accuracy of solar cell parameters extracted using conventional techniques, which is based on formulating the parameter extraction as a search and optimization problem.
Journal ArticleDOI
On the extraction of linear and nonlinear physical parameters in nonideal diodes
Vissarion Mikhelashvili,Gadi Eisenstein,V. Garber,S. Fainleib,Gad Bahir,Dan Ritter,Meir Orenstein,A. Peer +7 more
TL;DR: In this paper, a parameter extraction technique for the simultaneous determination of physical parameters in nonideal Schottky barrier, p-n and p-i-n diodes is described.
Journal ArticleDOI
I–V methods to extract junction parameters with special emphasis on low series resistance
TL;DR: Lee et al. as discussed by the authors compare different I-V methods to extract junction parameters with a special emphasis on low series resistance determination, using a simulated case with random noise, and obtain good initial values for a numerical fit of the whole curve.
Journal ArticleDOI
Accurate electrical characterization of forward AC behavior of real semiconductor diode: giant negative capacitance and nonlinear interfacial layer
TL;DR: In this article, a new method was developed to analyze the forward ac behavior of a semiconductor diode that uses a series mode, which accurately measured the dependence of series resistance, junction capacitance, junction voltage, ideality factor, and interfacial layer on forward bias voltages.
Journal ArticleDOI
Extraction of Schottky diode parameters with a bias dependent barrier height
TL;DR: In this article, the authors describe a technique to extract device parameters of a Schottky barrier diode whose barrier height is bias dependent and which contains a linear series resistance, including the saturation current, the voltage dependence of the barrier height and of the ideality factor as well as series resistance.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TL;DR: In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.