Journal ArticleDOI
Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors
TLDR
In this paper, annealing effects on the characteristics of bismuth-doped indium zinc oxide (IZBO) thin films and the electrical properties of IZBO thin-film transistors (TFTs) were investigated.Abstract:
In this work, annealing effects on the characteristics of bismuth-doped indium zinc oxide (IZBO) thin films and the electrical properties of IZBO thin-film transistors (TFTs) were investigated. The X-ray diffraction results reveal that all the IZBO thin films have an amorphous structure regardless of different annealing temperatures. In addition, all the a-IZBO thin films exhibit high transmittance in the visible light region. It is found that the annealing temperature has strong influences on the performances of a-IZBO TFTs. The devices annealed at 400 °C exhibit optimum performances with a field effect mobility of 25.4 cm2 V−1 s−1, a subthreshold swing of 0.22 V decade−1, a threshold voltage of −1.4 V and an on-to-off current ratio of 4.3 × 107. Stability of the devices under positive bias stress and negative bias stress were studied as well.read more
Citations
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Syntheses, structural evolution, electrical and optoelectronic characterization of ZnO/CuO composite films doped with transition metal Mn2+ ions
TL;DR: In this paper , the influence of manganese (Mn) as a transition metal on the morphological, structural, optical, electrical, and optoelectronic characteristics of nanostructured ZnO/CuO films was evaluated.
Journal ArticleDOI
Density-Dependent Microstructures and Electromechanical Properties of Amorphous InGaZnO4 Semiconductors: An Ab Initio Study
Sun-Kyung Cha,Seong-Hun Im,Yongsung Kim,Ju Heyuck Baeck,Jiyong Noh,Kwon-Shik Park,Jeom Jae Kim,Soo Young Yoon +7 more
Journal ArticleDOI
Silicon doping and N2 annealing effects on Zn3N2 thin film transistors
TL;DR: In this article , Si-doped Zn 3 N 2 (ZSN) thin-film transistors were fabricated by magnetron sputtering and annealed in N 2 ambient.
References
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Book
CRC Handbook of Chemistry and Physics
TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
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A review: James H. Meisel, The Fall of the Republic: Military Revolt in France Edward R. Tannenbaum, The Action Française: Diehard Reactionaries in Twentieth-Century France
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Metal oxides for optoelectronic applications
TL;DR: This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin- film transistors, solar cells, diodes and memories.
Journal ArticleDOI
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
TL;DR: In this paper, the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors was investigated, and the authors attributed the Vth instability to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress.