Journal ArticleDOI
Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting components
J. Zimmermann,E. Constant +1 more
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In this article, Monte Carlo techniques are used for a complete study of unipolar semiconducting components for both diffusion noise properties and static characteristics, taking into account space-charge reaction by integration of Poisson's equation.Abstract:
It is shown in this paper that Monte Carlo techniques are available for a complete study of unipolar semiconducting components for both diffusion noise properties and static characteristics. This necessitates taking into account space-charge reaction by integration of Poisson's equation. Two possible methods are proposed and carried out in a unidimensional treatment. Emphasis is given to the various problems which are encountered, especially those concerning the reliability of the solutions. In the first of the two methods (single carrier) the validity of classical electrokinetics equations is investigated, showing the influence of possible relaxation effects in a component. In the second method (multicarrier), it is shown that diffusion noise properties are approachable by observation and spectral analysis of current or voltage fluctuations at the ends of the component.read more
Citations
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Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
R.K. Cook,J. Frey +1 more
TL;DR: In this paper, the results of computer simulations of submicron-scale Si and GaAs MESFET's which include carrier energy transport effects ("velocity overshoot") are presented.
Book
Semiconductor Device Modelling
TL;DR: An overview of semiconductor device modelling is presented in this article, which describes the principal methods of representing and analysing modern solid-state devices, including classical, semiclassical, particle and quantum transport methodologies.
Journal ArticleDOI
AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICES
R.K. Cook,Jeffrey Frey +1 more
TL;DR: In this article, an approximate form of the energy-transport equation is developed; this equation is easily included in conventional device simulation codes, which then require only slightly more solution time than standard models using fielddependent transport coefficients.
Journal ArticleDOI
Microscopic simulation of electronic noise in semiconductor materials and devices
TL;DR: In this article, a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices is presented based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver.
Journal ArticleDOI
Noise modeling in submicrometer-gate FET's
TL;DR: In this article, a simple noise model for submicrometer-gate FET's is proposed, which takes into account the nonstationary electron dynamics effects which are of great importance.
References
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Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
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Monte Carlo determination of electron transport properties in gallium arsenide
TL;DR: In this article, a Monte Carlo technique was used to calculate the electron distribution functions in the (000) and (100) valleys of gallium arsenide, and the structure of the distribution function was interpreted in terms of the energy dependence of the scattering processes, particular reference being made to the prediction of a population inversion for fields in excess of about 10 kV cm.
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Quantum Theory of Atoms, Molecules and the Solid State: A Tribute to John C. Slater
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Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo Method
J. G. Ruch,W. Fawcett +1 more
TL;DR: In this paper, the transport properties of gallium arsenide in an electric field have been calculated in the temperature range 77°-500°K using a Monte Carlo technique, and it is found that the threshold field for the onset of negative differential mobility changes only slightly over this temperature range increasing from 3.1 kV/cm at 77°K to 3.7kV/ cm at 500°K, while the negative differential movement reduces from 4200 to 1000 cm2/V sec over the same temperature rise.