Journal ArticleDOI
Aspect ratio dependent etching lag reduction in deep silicon etch processes
TLDR
In this paper, a physical model is presented to describe the time division multiplex (TDM) plasma etch processes and thereafter the experimental results on aspect ratio dependent etching (ARDE) lag reduction.Abstract:
Microelectromechanical system (MEMS) device fabrication often involves three dimensional structures with high aspect ratios. Moreover, MEMS designs require structures with different dimensions and aspect ratios to coexist on a single microchip. There is a well-documented aspect ratio dependent etching (ARDE) effect in deep silicon etching processes. For features with different dimensions etched simultaneously, the ARDE effect causes bigger features to be etched at faster rates. In practice, ARDE effect has many undesired complications to MEMS device fabrication. This article presents a physical model to describe the time division multiplex (TDM) plasma etch processes and thereafter the experimental results on ARDE lag reduction. The model breaks individual plasma etch cycles in the TDM plasma etch processes into polymer deposition, polymer removal, and spontaneous silicon etching stages. With the insights gained from the model and control over the passivation and etch steps, it has been demonstrated that ...read more
Citations
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Journal ArticleDOI
High aspect ratio silicon etch: A review
TL;DR: High aspect ratio (HAR) silicon etch is reviewed in this paper, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies.
Journal ArticleDOI
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
TL;DR: In this article, an intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity.
Journal ArticleDOI
Fabrication of sharp silicon hollow microneedles by deep-reactive ion etching towards minimally invasive diagnostics
Yan Li,Hang Zhang,Ruifeng Yang,Yohan Laffitte,Ulises Schmill,Wenhan Hu,Moufeed Kaddoura,Eric J. M. Blondeel,Bo Cui +8 more
TL;DR: A team led by Bo Cui from University of Waterloo, and Eric Blondeel from ExVivo Labs Inc., demonstrates a modified deep reactive ion etching process for creating cone-shaped silicon microneedles with a hole opening for fluid extraction.
Journal ArticleDOI
Plasma etch technologies for the development of ultra-small feature size transistor devices
Dipu Borah,Matthew T. Shaw,Sozaraj Rasappa,Richard A. Farrell,Colm T. O'Mahony,C. M. Faulkner,M. Bosea,P. Gleeson,Justin D. Holmes,Michael A. Morris +9 more
TL;DR: In this paper, the formation of ultra-small device structures from the directed self-assembly of block copolymers (BCPs) where nanopatterns are formed from the micro-phase separation of the system was discussed.
Journal ArticleDOI
Immunity to Scaling in MoS2 Transistors Using Edge Contacts.
Zhihui Cheng,Katherine Price,Shreya Singh,Steven Noyce,Yuh-Chen Lin,Yifei Yu,Linyou Cao,Aaron D. Franklin +7 more
TL;DR: It is shown that clean edge contacts to 2D MoS2 can provide immunity to the contact-scaling problem, with performance that is independent of contact length down to the 20 nm regime.
References
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Journal ArticleDOI
Microscopic uniformity in plasma etching
TL;DR: In this article, the authors review recent literature on microscopic uniformity in plasma etching and carefully define terminology to distinguish between aspect ratio dependent etching (ARDE) and the pattern dependent effect known as microloading, where the reactant concentration is depeleted as a result of an excessive substrate load.
Journal ArticleDOI
Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher
TL;DR: In this paper, the authors report the experimentally obtained response surfaces of silicon etching rate, aspect ratio dependent etching (ARDE), photoresist etch rate, and anisotropy parameter in a time multiplexed inductively coupled plasma etcher.
Journal ArticleDOI
Charging of pattern features during plasma etching
J. C. Arnold,Herbert H. Sawin +1 more
TL;DR: In this article, the localized charging of a rectangular trench during the plasma etching of a perfectly insulating surface was modeled assuming an isotropic electron flux and monodirectional ion bombardment.
Journal ArticleDOI
Conductance considerations in the reactive ion etching of high aspect ratio features
J. W. Coburn,Harold F. Winters +1 more
TL;DR: Very simple vacuum conductance arguments indicate that in the reactive ion etching of high aspect ratio features, the conductance is adequate to allow etch products to flow out of the feature without building up a pressure which would allow gas phase collisions to become important as mentioned in this paper.
Journal ArticleDOI
The Electron Charging Effects of Plasma on Notch Profile Defects.
Toshihisa Nozawa,Kinoshita Takashi,Tetsuya Nishizuka,Akira Narai,Takayoshi Inoue,Akimitsu Nakaue +5 more
TL;DR: In this article, the notch occurrence factor in polysilicon etching was investigated using a newly designed test mask pattern, which varied the space width, the line width of the line and space structure, and the pad perimeter which connected the line-and-space structure.
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