Journal ArticleDOI
Charging of pattern features during plasma etching
J. C. Arnold,Herbert H. Sawin +1 more
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In this article, the localized charging of a rectangular trench during the plasma etching of a perfectly insulating surface was modeled assuming an isotropic electron flux and monodirectional ion bombardment.Abstract:
The localized charging of a rectangular trench during the plasma etching of a perfectly insulating surface was modeled assuming an isotropic electron flux and monodirectional ion bombardment. The field set up by the localized charging acts to deflect arriving ions, modifying the ion flux densities within the feature, and thus, etching rates. Preliminary simulations indicate that this may be important in the shaping of etching profiles.read more
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Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures
M.J. de Boer,Johannes G.E. Gardeniers,Henri Jansen,E. Smulders,M.-J. Gilde,G. Roelofs,J.N. Sasserath,Miko Elwenspoek +7 more
TL;DR: In this paper, the authors present guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6/O/sub 2/based high-density plasmas at cryogenic temperatures.
Journal ArticleDOI
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
TL;DR: In this article, an intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity.
Journal ArticleDOI
Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
TL;DR: In this paper, the progress made in plasma etching technologies is described from the viewpoint of requirements for the manufacturing of devices, and critical applications of RIE, isotropic etching, and plasma ashing/cleaning to form precisely controlled profiles of high-aspect-ratio contacts (HARC), gate stacks, and shallow trench isolation (STI) in the front end of line (FEOL) are described in detail.
Journal ArticleDOI
Micromachining of buried micro channels in silicon
M.J. de Boer,R.W. Tjerkstra,Johan W. Berenschot,Henri Jansen,G.J. Burger,Johannes G.E. Gardeniers,Michael Curt Elwenspoek,A. van den Berg +7 more
TL;DR: In this paper, a new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented.
Journal ArticleDOI
Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems
TL;DR: In this article, the link between etch process parameters such as pressure, rf power, etching gas chemistry, temperature, and the energy-resolving quadrupole mass spectrometer assembled into the cathode was established.
References
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Journal ArticleDOI
Effect of Potential Field on Ion Deflection and Shape Evolution of Trenches during Plasma‐Assisted Etching
TL;DR: In this article, a mathematical model was developed to study shape evolution of trenches during plasma assisted etching using a two-region sheath model to determine the effect of local potential distribution on ion deflection and on the ion flux and energy distribution along the walls of the trench.
Journal ArticleDOI
Single Silicon Etching Profile Simulation
TL;DR: In this article, a microprobe Auger analysis of a trench side wall has proven that the bombardment of obliquely impinging ions to a side wall leads to both concave and tailed features.
Journal ArticleDOI
Oxygen ion beam etching for pattern transfer
TL;DR: Oxygen ion beam etching for resist materials has been studied in this article, where an undercut profile is observed in the transferred patterns due to large ion beam divergence, and patterns having square cross sections are obtained.
Journal ArticleDOI
Photoresist etching in a hollow cathode reactor
M. Gross,C. M. Horwitz +1 more
TL;DR: In this article, the submicron photoresist patterning capabilities of hollow cathode and asymmetric diode (reactive ion etch) reactors are compared, showing that hollow cathodes are 15 times faster than a diode at a given target voltage, at pressures of 2 Pa and below.