Journal ArticleDOI
C-V Characteristics of GaP MOS diode with anodic oxide film
Toshiaki Ikoma,H. Yokomizo +1 more
TLDR
In this article, the C-V curve showed injection-type hysteresis and the transferred charged carriers were estimated to be about 9 × 1011/cm2 and 6 × 106V/cm, respectively.Abstract:
Gallium phosphide was anodically oxidized in an aqueous H 2 O 2 solution and MOS diodes were fabricated by the evaporation of aluminum. The resistivity and electric breakdown strength were higher than 1014Ω.cm and 6 × 106V/cm, respectively. Almost no frequency dispersion was observed in the C-V curves from 100 Hz to 1 MHz. The C-V curve showed the injection-type hysteresis. From the hysteresis window, the transferred charged carriers were estimated to be about 9 × 1011/cm2. By leaving the diode biased at negative voltage or by shining light with energy higher than 1.8 eV, the curve shifted to negative voltage direction. The results indicate that the density of the fast interface states which follow the 100-Hz signal is very low but there exist deep electron traps with activation energy higher than 1.8 eV near the surface in the oxide film and the shallower electron traps which cause the hysteresis in the dark.read more
Citations
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Journal ArticleDOI
Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
T. Sawada,H. Hasegawa +1 more
TL;DR: The capacitance/voltage characteristics of the metal-oxide-semiconductor system formed on n-type GaAs by anodic oxidation differ greatly from those of p-type GAAs, showing an anomalous frequency dispersion which is not caused by the Quast carrier diffusion mechanism, but by anomalous formation of interface states as discussed by the authors.
Journal ArticleDOI
Semiconductor surface passivation
L.G. Meiners,H.H. Wieder +1 more
TL;DR: A review of the current status and the chronological evolution of metal-insulator-semiconductor (MIS) structures including homomorphic surface oxides and synthetic, heteromorphic insulating layers used for the surface passivation of elemental and compound semiconductor surfaces is presented in this paper.
Journal ArticleDOI
Oxide and interface properties of anodic oxide MOS structures on III–V compound semiconductors
TL;DR: In this article, anodic oxides on GaAs, GaSb or GaP were used for charge injection into the oxides and the properties of oxides were discussed.
Journal ArticleDOI
MOS processing for III–V compound semiconductors: Overview and bibliography
Carl W. Wilmsen,S. Szpak +1 more
Journal ArticleDOI
Properties of anodic oxide films on n-type GaAs, GaAs0.6P0.4 and GaP
TL;DR: In this paper, anodic oxide films on III-V compound semiconductors are composed of several oxide layers, which can be explained by imperfections of the oxide-semiconductor interface.
References
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Journal ArticleDOI
The Anodic Oxidation of GaAs in Aqueous H 2 O 2 Solution
Journal ArticleDOI
Improved method of anodic oxidation of GaAs
TL;DR: In this paper, a new and better electrolyte for anodic oxidation of GaAs is described, which is an aqueous solution of tartaric or citric acid mixed with glycol and can produce native oxide films with remarkably improved dielectric properties.
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The Oxidation of GaP and GaAs
TL;DR: In this paper, it was concluded that thermal oxide masking should be readily applicable to and that thermal dioxide masking was not applicable to the case of high temperatures higher than 1000 °C.
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Electrical Properties of a Native Oxide on Gallium Phosphide
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A Rutherford scattering study of the chemical composition of native oxides on GaP
TL;DR: In this paper, the chemical compositions of two types of protective oxide films on single crystal GaP have been studied by Rutherford backscattering (2 MeV He+) combined with ion channeling.