Journal ArticleDOI
Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
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TLDR
In this article, the carrier transport and recombination dynamics of monolithic InGaN/GaN light-emitting p-n junction structures with two active regions are investigated.Abstract:
The carrier transport and recombination dynamics of monolithic InGaN/GaN light-emitting p-n junction structures with two active regions are investigated. Room-temperature and low-temperature photoluminescence and room-temperature electroluminescence measurements show two emission bands originating from the two active regions. In electroluminescence, the intensity ratio of the two emission bands is independent of injection current. In contrast, the intensity ratio depends strongly on the excitation intensity in photoluminescence measurements. The dependency of the emission on excitation is discussed and attributed to carrier transport between the two active regions and to the different carrier injection dynamics in photoluminescence and electroluminescence. The luminous efficacy of a Gaussian dichromatic white-light source is calculated assuming a line broadening ranging from 2kT to 10kT. Luminous efficacies ranging from 380 to 440 lm/W are obtained for broadened dichromatic sources.read more
Citations
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Journal ArticleDOI
Visible‐Color‐Tunable Light‐Emitting Diodes
Young Joon Hong,Chul Ho Lee,Chul Ho Lee,Aram Yoon,Miyoung Kim,Han Kyu Seong,Hun Jae Chung,Cheolsoo Sone,Yong Jo Park,Gyu-Chul Yi +9 more
TL;DR: The fabrication and characteristics of monolithic, full-color, tunable LEDs, whose EL color can be tuned continuously from red to blue by adjusting the external electric bias are reported on.
Journal Article
Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well : Optics and Quantum Electronics
TL;DR: In this article, two types of high-efficiency white light-emitting diodes (LEDs) composed of an InGaN multi-quantum well (MQW), which emit light of two or three different colors without phosphors, were fabricated.
Journal ArticleDOI
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
TL;DR: In this article, a novel gain media based on staggered InGaN quantum wells (QWs) grown by metal-organic chemical vapor deposition was demonstrated as improved active region for visible light emitters.
Journal ArticleDOI
Electrically Driven, Phosphor-Free, White Light-Emitting Diodes using Gallium Nitride-based Double Concentric Truncated Pyramid Structures
Seung Hyuk Lim,Young-Ho Ko,Young-Ho Ko,Christophe Rodriguez,Christophe Rodriguez,Su-Hyun Gong,Yong-Hoon Cho +6 more
TL;DR: Elect electrically driven, phosphor-free, white LEDs based on three-dimensional gallium nitride structures with double concentric truncated hexagonal pyramids are demonstrated and the electroluminescence spectra are stable with varying current.
Journal ArticleDOI
Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells
TL;DR: In this paper, a phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN∕GaN multiple quantum wells (MQWs) grown by a selective area growth method.
References
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Shuji Nakamura,Gerhard Fasol +1 more
TL;DR: The physics of gallium nitrides and related compounds GaN growth p-Type GaN obtained by electron beam irradiation n-Type GAN p-type GaN InGaN Zn and Si co-doped GaN double-heterostructure blue and blue green LEDs inGaN single-quantum-well structure LEDs room-temperature pulsed operation of laser diodes emission mechanisms of LEDs and LDs room temperature CW operation of InGAN MQW LDs latest results as discussed by the authors.
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Luminescence conversion of blue light emitting diodes
TL;DR: Using blue-emitting GaN/6H-SiC chips as primary light sources, the authors have fabricated green, yellow, red and white emitting LEDs, and demonstrated the generation of mixed colors, such as turquoise and magenta.
Journal ArticleDOI
High-power phosphor-converted light-emitting diodes based on III-Nitrides
TL;DR: In this article, the authors proposed a solution for the phosphor conversion of light-emitting diode light for white light sources and some monochrome applications, which takes into account specific issues if aimed at high power output.
Journal ArticleDOI
Carrier lifetimes in silicon
TL;DR: In this paper, the authors show that surface recombination plays an important role in today's high purity Si and will become yet more important as bulk impurity densities in Si are reduced further.