Journal ArticleDOI
Closed-form analytical solutions for the breakdown voltage of planar junctions terminated with a single floating field ring
TLDR
In this paper, analytical solutions for the breakdown voltage of cylindrical junctions terminated with a single, optimally placed, floating field ring are presented in a normalized form which allows calculation of breakdown voltage over a broad range of junction depths and background dopings.Abstract:
Analytical solutions for the breakdown voltage of cylindrical junctions terminated with a single, optimally placed, floating field ring are presented. These solutions are provided in a normalized form which allows calculation of the breakdown voltage over a broad range of junction depths and background dopings. In addition, an equation for the optimal spacing of the field ring has been derived. This allows determination of the optimal spacing for the first time without resorting to numerical analysis for each specific case.read more
Citations
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Journal ArticleDOI
Guard ring design for high voltage operation of silicon detectors
TL;DR: In this paper, computer simulations and experiments to develop guard ring structures for use in silicon detectors requiring thick depletion layers, high operating voltages and biasing beyond depletion without increase in the leakage current and the noise.
Journal ArticleDOI
Study of breakdown effects in silicon multi-guard structures
M. Da Rold,N. Bacchetta,Dario Bisello,Alessandro Paccagnella,G.-F. Dalla Betta,Giovanni Verzellesi,O. Militaru,Richard Wheadon,P.G. Fuochi,C. Bozzi,Roberto Dell'Orso,Alberto Messineo,Guido Tonelli,Piero Giorgio Verdini +13 more
TL;DR: In this article, the authors present results for different designs of multi-guard structures, before and after irradiation with ionising and non-ionising radiation sources (p,n,/spl gamma/), and for different doses.
Journal ArticleDOI
A new analytic method to design multiple floating field limiting rings of power devices
TL;DR: In this paper, a new analytical method to design the multiple floating field limiting rings (MFFLRs) system of power devices has been proposed, based on which the effects of the junction depth and ring spacing on the voltage and edge field profile have been analyzed.
Journal ArticleDOI
A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator
TL;DR: In this article, a design methodology for the optimal multiple-field-limiting-ring (FLR) termination structure is proposed, where a simple modeling structure is developed to find the so-called BV-spacing curve, from which the optimal structure can be obtained directly without trial and error.
Journal ArticleDOI
An Analytic Model of Planar Junctions with Multiple Floating Field Limiting Rings
Dong-Gun Bae,Sang-Koo Chung +1 more
TL;DR: In this paper, a potential function satisfying the two-dimensional Poisson equation for planar junctions with a single field limiting ring (FLR) is presented for the first time which allows an approximate but quick determination of the breakdown voltage and optimized ring spacing.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Theory and breakdown voltage for planar devices with a single field limiting ring
TL;DR: In this paper, a computer algorithm is presented which makes it possible to perform field calculations on devices with floating field rings and a normalized curve is presented to show the relative improvement that a single optimally placed field ring has on the breakdown voltage for any planar device.
Journal ArticleDOI
Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions
TL;DR: In this paper, the breakdown voltage of abrupt cylindrical and spherical junctions has been obtained, using suitable approximations for the electric field in the depletion layer, using a single curve for each situation.