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Open AccessJournal ArticleDOI

CompEx++: Compression-Expansion Coding for Energy, Latency, and Lifetime Improvements in MLC/TLC NVMs

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TLDR
In this article, a low overhead scheme that synergistically integrates pattern-based compression with expansion coding to realize simultaneous energy, latency, and lifetime improvements in MLC/TLC NVMs is proposed.
Abstract
Multilevel/triple-level cell nonvolatile memories (MLC/TLC NVMs) such as phase-change memory (PCM) and resistive RAM (RRAM) are the subject of active research and development as replacement candidates for DRAM, which is limited by its high refresh power and poor scaling potential. In addition to the benefits of nonvolatility (low refresh power) and improved scalability, MLC/TLC NVMs offer high data density and memory capacity over DRAM. However, the viability of MLC/TLC NVMs is limited primarily due to the high programming energy and latency as well as the low endurance of NVM cells; these are primarily attributed to the iterative program-and-verify procedure necessary for programming the NVM cells.This article proposes compression-expansion (CompEx) coding, a low overhead scheme that synergistically integrates pattern-based compression with expansion coding to realize simultaneous energy, latency, and lifetime improvements in MLC/TLC NVMs. CompEx coding is agnostic to the choice of compression technique; in this work, we evaluate CompEx coding using both frequent pattern compression (FPC) and base-delta-immediate (BΔI) compression. CompEx coding integrates FPC/BΔI with (k,m)q “expansion” coding; expansion codes are a class of q-ary linear block codes that encode data using only the low energy states of a q-ary NVM cell. CompEx coding simultaneously reduces energy and latency and improves lifetime for negligible-to-no memory overhead and negligible logic overhead (a 10k gates, which is

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Citations
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Proceedings ArticleDOI

SECRET: smartly EnCRypted energy efficient non-volatile memories

TL;DR: This work synergistically integrates zero-based partial writes with XOR-based energy masking to realize Smartly EnCRypted Energy efficienT, i.e., SECRET MLC/TLC NVMs, without compromising the security of the underlying encryption technique.
Proceedings ArticleDOI

ASSURE: Authentication Scheme for SecURE Energy Efficient Non-Volatile Memories

TL;DR: ASSURE synergistically integrates smart message authentication codes (SMACs), which eliminate redundant cell writes by enabling MAC computation of only modified words on memory writes, and multi-root MTs (MMTs), which reduce MT reads/writes by constructing either high performance static MMTs (SMMTs) or low overhead dynamic MMTS (DMMTs%) over frequently accessed memory regions.
Proceedings ArticleDOI

Attaché: towards ideal memory compression by mitigating metadata bandwidth overheads

TL;DR: Attaché, a framework that reduces the overheads of Metadata accesses and enables data and its Metadata to be accessed together, is proposed and implemented on a memory system that uses Sub-Ranking.
Journal ArticleDOI

A Survey of Non-Volatile Main Memory Technologies: State-of-the-Arts, Practices, and Future Directions

TL;DR: The landscape of emerging NVMM technologies is revisited, and the state-of-the-art studies ofNVMM technologies are surveyed, as well as the recent work of hybrid memory system designs from the dimensions of architectures, systems, and applications.
Proceedings ArticleDOI

Extending the lifetime of NVMs with compression

TL;DR: This paper proposes COE to COmpress cacheline for Extending the lifetime of NVMs through combining data compression techniques with data encoding methods, and shows that COE can reduce the bit flips with negligible capacity overhead.
References
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Book

Computer Architecture: A Quantitative Approach

TL;DR: This best-selling title, considered for over a decade to be essential reading for every serious student and practitioner of computer design, has been updated throughout to address the most important trends facing computer designers today.
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Metal–Oxide RRAM

TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
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