Journal ArticleDOI
Conductance of small semiconductor devices
A.A. Kastalsky,Michael Shur +1 more
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TLDR
In this article, the authors calculate low field conductivity and mobility as a function of a sample length for small semiconductor samples and show that the apparent low field mobility is proportional to the device length.About:
This article is published in Solid State Communications.The article was published on 1981-08-01. It has received 44 citations till now. The article focuses on the topics: Electron mobility & Semiconductor device.read more
Citations
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Journal ArticleDOI
Nonresonant Detection of Terahertz Radiation in Field Effect Transistors
Wojciech Knap,V. Kachorovskii,Yanqing Deng,Sergey Rumyantsev,Jian Lu,Remigijus Gaska,Michael Shur,Grigory Simin,Xiaobo Sharon Hu,M. Asif Khan,C. A. Saylor,L. C. Brunel +11 more
TL;DR: In this paper, the photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage, which can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.
Journal ArticleDOI
Low ballistic mobility in submicron HEMTs
TL;DR: In this paper, the field effect mobility at room temperature in 0.15-/spl mu/m gate AlGaAs/GaAs HEMTs cannot exceed 3000 cm/sup 2/V-s.
Journal ArticleDOI
Ballistic transport in high electron mobility transistors
Jing Wang,Mark Lundstrom +1 more
TL;DR: In this paper, a general ballistic FET model that was previously used for ballistic MOSFETs is applied to ballistic high electron mobility transistors (HEMTs), and the results are compared with experimental data for a sub-50 nm InAlAs-InGaAs HEMT.
Journal ArticleDOI
A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films
TL;DR: In this paper, a quantitative trapping model is introduced to describe the electrical properties of a semiconductor-grain-boundary-semiconductor (SGBS) barrier in polysilicon films over a wide temperature range.
Journal ArticleDOI
Millimeter wave emission from GaN high electron mobility transistor
Y. Deng,Roland Kersting,Jingzhou Xu,Ricardo Ascazubi,Xi-Cheng Zhang,Michael Shur,Remis Gaska,Grigory Simin,M. Asif Khan,Victor Ryzhii +9 more
TL;DR: In this paper, a GaN high electron mobility transistor with the gate length of 1.5 μm at 8 K was shown to emit millimeter wave electromagnetic radiation at the saturation voltage.
References
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Journal ArticleDOI
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
Michael Shur,L.F. Eastman +1 more
TL;DR: In this paper, the current-voltage characteristics of a two-terminal FET with ballistic electron transport were analyzed using an approach similar to the Shockley model, showing that very high drift velocities can be obtained at low voltages leading to high speed and low power consumption in possible applications in logic circuits.
Journal ArticleDOI
Near ballistic electron transport in GaAs devices at 77°K
Michael Shur,L.F. Eastman +1 more
TL;DR: In this article, the effect of collisions on near ballistic electron transport in short GaAs terminal devices at 77°K was analyzed in the frame of the model based on the equations of momentum and energy balance where momentum relaxation times are fit to agree with the results of Monte Carlo calculation for static constant electric fields.
Proceedings ArticleDOI
Ballistic and collision dominated transport in a short semiconductor diode
TL;DR: In this paper, a simple model for electron transport in a short semiconductor diode was proposed, assuming a single energy independent relaxation time, and the model predicts that at high injection levels the I-V characteristics change from the case described by the Child-Langmuir law for a short device and/or a large time between collisions to the Mott-Gurney law in the collision-dominated case.
Related Papers (5)
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
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