Journal ArticleDOI
Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory
TLDR
In this paper, a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported.Abstract:
Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported. A reversible shift in the threshold voltage (V Th ) and reliable memory characteristics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross-linked poly(4-vinylphenol). The F8T2 NFGM showed relatively high field-effect mobility (μ FET ) (0.02 cm 2 V -1 s -1 ) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10 4 ) during writing and erasing with an operation voltage of 80 V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top-gated polymer NFGM could be used as an organic transistor memory element for organic flash memory.read more
Citations
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Journal ArticleDOI
Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method
Yongbo Yuan,Gaurav Giri,Alexander L. Ayzner,Alexander L. Ayzner,Arjan P. Zoombelt,Stefan C. B. Mannsfeld,Jihua Chen,Dennis Nordlund,Michael F. Toney,Jinsong Huang,Zhenan Bao +10 more
TL;DR: The growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1] Benzothiophene (C8-BTBT) is described from a blended solution of C8- BTBT and polystyrene by using a novel off-centre spin-coating method, indicating their potential for transparent, high-performance organic electronics.
Journal ArticleDOI
Polymer and Organic Nonvolatile Memory Devices
TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.
Journal ArticleDOI
Towards the development of flexible non-volatile memories.
TL;DR: The flash memories, resistive random access memories and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device.
Journal ArticleDOI
Flexible organic transistor memory devices.
Soo-Jin Kim,Jang-Sik Lee +1 more
TL;DR: The flexible nonvolatile organic memory devices developed on the plastic substrates based on the organic thin-film transistors embedding self-assembled gold nanoparticles exhibited good programmable memory characteristics with respect to the program/erase operations, resulting in controllable and reliable threshold voltage shifts.
Journal ArticleDOI
Printed, Flexible, Organic Nano‐Floating‐Gate Memory: Effects of Metal Nanoparticles and Blocking Dielectrics on Memory Characteristics
TL;DR: In this article, the effects of using a blocking dielectric layer and metal nanoparticles (NPs) as charge-trapping sites on the characteristics of organic nano-floating-gate memory (NFGM) devices are investigated.
References
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