Journal ArticleDOI
Current‐voltage characteristic of Ti‐pSi metal‐oxide‐semiconductor diodes
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TLDR
In this paper, the electrical properties of Ti-pSi metaloxide-semiconductor diodes have been studied as a function of temperature and applied voltage, using conventional Schottky barrier capacitance-voltage (C•V) and current voltage measurements.Abstract:
The electrical characteristics of Ti‐pSi metal‐oxide‐semiconductor diodes have been studied as a function of temperature and of applied voltage, using conventional Schottky barrier capacitance‐voltage (C‐V) and current‐voltage (I‐V) measurements. The results show a strong deviation from those expected from thermionic emission and from the minority carrier injection theory for the current mechanism. Unlike other authors who proposed a multistep recombination‐tunneling mechanism, we have stressed that a model based on the inhomogeneity of the barrier height over the diode area predicts a temperature and voltage behavior of the I‐V characteristic similar to the recombination‐tunneling mechanism. The concept of inhomogeneity proposed by former authors is supported by Auger depth concentration profiles which show an intermixed region of Ti and Si. It is observed that the equilibrium semiconductor band bending exhibits a stronger temperature dependence than expected from the variation of the semiconductor Fermi level.read more
Citations
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Journal ArticleDOI
Barrier inhomogeneities at Schottky contacts
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Journal ArticleDOI
The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes
TL;DR: In this paper, the effect of the interfacial oxide layer and the ideality factor n in the current transport mechanism of MIS diodes was investigated and the energy distribution of Nss was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.
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Comment on “Analysis of I-V measurements on CrSi2Si Schottky structures in a wide temperature range”
Journal ArticleDOI
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
TL;DR: In this paper, the current and voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor phase epitaxy on Ge substrates were determined in the temperature range 80i?½300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures.
Journal ArticleDOI
Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods
TL;DR: In this article, an electrical characterization of the Al/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/p-Si Schottky diode with the ideality factor value of 1.88 obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schotty diode due to the existence of an insulating layer on the organic semiconductor.
References
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Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Field and thermionic-field emission in Schottky barriers
F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Journal ArticleDOI
Metal Precipitates in Silicon p‐n Junctions
A. Goetzberger,W. Shockley +1 more
TL;DR: In this article, it was shown that metal precipitates can be removed or prevented by ''gettering'' from surface layers, such as metallic coatings and certain glassy oxide layers.
Journal ArticleDOI
Electrical Transport in nGe-pGaAs Heterojunctions†
A. R. Riben,D. L. Feucht +1 more
TL;DR: In this paper, a multi-step recombination-tunnelling model, similar to that used to describe the excess current in tunnel diodes, is developed to explain the observed electrical characteristics of nGe-pGaAs heterodes.