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Journal ArticleDOI

Dark I–U–T measurements of single crystalline silicon solar cells

Ewa Radziemska
- 01 Jun 2005 - 
- Vol. 46, Iss: 46, pp 1485-1494
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TLDR
In this paper, the effect of parasitic resistances on silicon solar cell performance was discussed and the currentvoltage I − U characteristics of single crystalline silicon solar cells at different temperatures were measured in the dark.
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This article is published in Energy Conversion and Management.The article was published on 2005-06-01. It has received 65 citations till now. The article focuses on the topics: Crystalline silicon & Theory of solar cells.

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Citations
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Journal ArticleDOI

A simple and efficient solar cell parameter extraction method from a single current-voltage curve

TL;DR: In this paper, a simple and efficient method for the extraction of all the parameters of a solar cell from a single current-voltage (I-V) curve under the constant illumination level is proposed.
Journal ArticleDOI

Solar cells parameters evaluation considering the series and shunt resistance

TL;DR: In this paper, the authors presented a new technique for the evaluation of the parameters of illuminated solar cell with a single diode lumped circuit model and considering the series and shunt resistances.
Journal ArticleDOI

Modelling power output in photovoltaic modules for outdoor operating conditions

TL;DR: In this article, a methodology to estimate PV electrical production from outdoor testing data is presented based on the adjustment of a well known I-V model curve slightly modified and a new maximum power output expression.
Journal ArticleDOI

A new method to extract the equivalent circuit parameters of a photovoltaic panel

TL;DR: In this article, the shunt resistance Rsh of a single diode photovoltaic (PV) panel was determined by using the manufacturer data of the PV panel and an experimental measurement.
Journal ArticleDOI

Extraction of diode parameters of silicon solar cells under high illumination conditions

TL;DR: In this paper, an analytical method was developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J-V curve, based on one exponential model of silicon solar cells under high illumination conditions.
References
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Journal ArticleDOI

Analysis of the effect of parasitic resistances on the performance of photovoltaic modules

TL;DR: In this article, the effects of shunt and series resistances on photovoltaic module performance are discussed and the results show how currentvoltage characteristics and module performance is affected.
Journal ArticleDOI

Thermal performance of Si and GaAs based solar cells and modules: a review

TL;DR: In this paper, a review summarizes the recent progress obtained in the field of temperature performance of crystalline and amorphous silicon solar cells and modules and gives a general analysis of results and reviews of applications for building integrated photovoltaic thermal systems that convert solar energy into electrical one and heat as well.
Journal ArticleDOI

Equivalent model of monocrystalline, polycrystalline and amorphous silicon solar cells

TL;DR: In this paper, the currentvoltage characteristics of monocrystalline, polycrystalline and amorphous silicon solar cells are measured in the dark using two diodes equivalent model.
Book

Solar Cells: An Introduction to Crystalline Photovoltaic Technology

TL;DR: An overview of solar cell technology can be found in this paper, where the authors present a list of Symbols of Symbolic Diodes, Symbolic Symbols and Symbolic Methods.
Journal ArticleDOI

Dark I–V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells

TL;DR: In this paper, the dark IV-curves were investigated in order to contribute to a better understanding of the basis of solar cells by using a simple (Al/(p) c-Si/(n) a-Si:H/ITO/metal grid) structure.
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