Open AccessProceedings Article
DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects
A. El Rafei,G. Callet,G. Mouginot,Jad Faraj,Sylvain Laurent,Michel Prigent,Raymond Quéré,Olivier Jardel,Sylvain Delage +8 more
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TLDR
In this article, a test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been set up, this set-up has been used to investigate the DC to RF behavior of AlInN/GaN HEMTS.Abstract:
A test bench allowing S-parameters measurements from 10 Hz to 40 GHz has been set-up, this set-up has been used to investigate the DC to RF behavior of AlInN/GaN HEMTS. The measurement performed have demonstrated the dispersion effects observed on GaN HEMTS due to trapping effects and proved very useful for in-depth characterization of RF devices.read more
Citations
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Journal ArticleDOI
An Extensive Experimental Analysis of the Kink Effects in ${ S}_{22}$ and ${ h}_{21}$ for a GaN HEMT
Giovanni Crupi,Antonio Raffo,Zlatica Marinkovic,Gustavo Avolio,Alina Caddemi,Vera Markovic,Giorgio Vannini,Dominique Schreurs +7 more
TL;DR: In this paper, the authors analyzed the kink phenomenon in GaN HEMT technology with respect to temperature and bias conditions, and showed that the dependence of the KE on the operating condition should be mainly attributed to the transconductance, which plays a determinant role in the appearance of this effect.
Journal ArticleDOI
Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs
TL;DR: In this paper, the frequency dispersion of transconductance and output conductance in AlInN/GaN high electron mobility transistors is investigated for the first time and a small-signal model is developed.
Proceedings ArticleDOI
Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs
Olivier Jardel,Sylvain Laurent,Tibault Reveyrand,Raymond Quéré,P. Nakkala,Audrey Martin,Stéphane Piotrowicz,M. Campovecchio,Sylvain Delage +8 more
TL;DR: In this paper, a non-linear GaN HEMT model for CAD including a trapping effects description consistent with both small-signal and large-Signal operating modes is proposed.
Journal ArticleDOI
Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S -parameters
C. Potier,Jean-Claude Jacquet,Christian Dua,Audrey Martin,Michel Campovecchio,M. Oualli,Olivier Jardel,Stéphane Piotrowicz,Sylvain Laurent,Raphaël Aubry,O. Patard,Piero Gamarra,Marie-Antoinette di Forte-Poisson,Sylvain Delage,Raymond Quéré +14 more
TL;DR: In this paper, a trap characterization method for gallium nitride high electron mobility transistors (GaN HEMTs) is presented based on the frequency dispersion of the output-admittance that is characterized by low-frequency S-parameter measurements.
Dissertation
Nouvelles méthodes de caractérisation et de modélisation non-linéaire électrothermique des effets de piège dans la technologie HEMT GaN pour l’étude de la stabilité pulse à pulse dans les applications radar
TL;DR: In this paper, the authors present an analysis of the mesure of stabilite pulse a pulse of a radar in the case of rafale radar d'impulsions irregulieres.
References
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Journal ArticleDOI
Power electronics on InAlN/(In)GaN: Prospect for a record performance
TL;DR: In this article, the authors compared basic physical parameters of Al/sub 0.2/Ga/sub0.8/N-GaN quantum well with InAlN/(In)GaN HEMTs.
Journal ArticleDOI
Electric field effect on the thermal emission of traps in semiconductor junctions
TL;DR: In this article, electric field effects on the thermal emission of traps in a diode have been studied and compared with experimental data on deep centers in GaAs, consistent with a thermal equivalent of the optical Franz-Keldysh effect.
Journal ArticleDOI
Conductance and capacitance studies in GaP Schottky barriers
G. Vincent,D. Bois,P. Pinard +2 more
TL;DR: In this paper, the conductance and capacitance associated with traps in Schottky barriers are investigated and a sample calculation of these two quantities is developed and compared with experimental data obtained in GaP VPE saples.
Journal ArticleDOI
AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
N. Sarazin,Erwan Morvan,M.-A. di Forte Poisson,M. Oualli,Christophe Gaquiere,Olivier Jardel,O. Drisse,M. Tordjman,M. Magis,Sylvain Delage +9 more
TL;DR: In this paper, high-frequency high-electron-mobility transistors (HEMTs) were fabricated on AlInN/AlN/GaN heterostructures grown by low-pressure metal-organic chemical vapor deposition on a SiC substrate.
Journal ArticleDOI
Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
Daniel Donoval,Ales Chvala,R. Šramatý,Jaroslav Kováč,J.-F. Carlin,Nicolas Grandjean,G. Pozzovivo,Jan Kuzmik,Dionyz Pogany,Gottfried Strasser,Peter Kordos +10 more
TL;DR: The currentvoltage characteristics of Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300-700 K as discussed by the authors.