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Defect characterization in graphene and carbon nanotubes using Raman spectroscopy.

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TLDR
This review discusses advances that have been made in the study of defect-induced double-resonance processes in nanographite, graphene and carbon nanotubes, mostly coming from combining Raman spectroscopic experiments with microscopy studies and from the development of new theoretical models.
Abstract
This review discusses advances that have been made in the study of defect-induced double-resonance processes in nanographite, graphene and carbon nanotubes, mostly coming from combining Raman spectroscopic experiments with microscopy studies and from the development of new theoretical models The disorder-induced peak frequencies and intensities are discussed, with particular emphasis given to how the disorder-induced features evolve with increasing amounts of disorder We address here two systems, ion-bombarded graphene and nanographite, where disorder is represented by point defects and boundaries, respectively Raman spectroscopy is used to study the ‘atomic structure’ of the defect, making it possible, for example, to distinguish between zigzag and armchair edges, based on selection rules of phonon scattering Finally, a different concept is discussed, involving the effect that defects have on the lineshape of Raman-allowed peaks, owing to local electron and phonon energy renormalization Such effects can be observed by near-field optical measurements on the G ′ feature for doped single-walled carbon nanotubes

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The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects

TL;DR: Graphene, a single atomic layer of sp2 hybridized carbon, exhibits a zero-band gap with linear band dispersion at the Fermi-level, forming a Dirac-cone at the K -points of its Brillouin zone as mentioned in this paper.
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Effect of defects on the intrinsic strength and stiffness of graphene

TL;DR: It is reported that the two-dimensional elastic modulus of graphene is maintained even at a high density of sp(3)-type defects, which provides important basic information for the rational design of composites and other systems utilizing the high modulus and strength of graphene.
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Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition

TL;DR: The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C, and it is determined that (111) containing facet produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu.
Journal ArticleDOI

Current understanding of the growth of carbon nanotubes in catalytic chemical vapour deposition

TL;DR: In the field of nanotube synthesis, catalytic chemical vapour deposition (CVD) is the prevailing synthesis method of carbon nanotubes as discussed by the authors, due to its higher degree of control and its scalability.
References
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Introduction to Solid State Physics

Charles Kittel, +1 more
- 01 Aug 1954 - 
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Introduction to solid state physics

TL;DR: In this paper, the Hartree-Fock Approximation of many-body techniques and the Electron Gas Polarons and Electron-phonon Interaction are discussed.
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Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
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Interpretation of Raman spectra of disordered and amorphous carbon

TL;DR: In this paper, a model and theoretical understanding of the Raman spectra in disordered and amorphous carbon is given, and the nature of the G and D vibration modes in graphite is analyzed in terms of the resonant excitation of \ensuremath{\pi} states and the long-range polarizability of the long range bonding.
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Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
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