Journal ArticleDOI
Design, Modeling and Fabrication of TPoS MEMS Resonators With Improved Performance at 1 GHz
TLDR
In this paper, the effects of physical dimensions such as length, width and thickness as well as the mode of vibration and the number of anchors on the performance of longitudinal thin film piezoelectric on silicon (TPoS) MEMS resonators have been studied.Abstract:
In this work, the effects of physical dimensions such as length, width and thickness as well as the mode of vibration and the number of anchors on the performance of longitudinal thin film piezoelectric on silicon (TPoS) MEMS resonators have been studied. TPoS resonators, designed for a resonant frequency of around 1 GHz, were fabricated with a 4 mask CMOS compatible process. A $225~\mu \text{m}$ wide resonator excited in its $23^{rd}$ order had an unloaded quality factor of 9453 (in vacuum), which is the highest value reported so far for similar resonators, motional resistance of $107~\Omega $ and linear thermal coefficient of frequency of -28.4 ppm. We have also studied and modeled the different loss mechanisms in these devices. The model matches well with measured results for resonators of different geometries, modes of vibrations and number of anchors. [2020-0397]read more
Citations
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Journal ArticleDOI
Effect of Phononic Crystal Orientation on AlN-on-Silicon Lamb Wave Micromechanical Resonators
TL;DR: In this article , the effect of orientation on the acoustic band gap (ABG) of two PnC designs and their effect on boosting quality factor (Q) of AlN-on-Silicon Lamb Wave Resonators (LWRs) was explored.
Effect of Phononic Crystal Orientation on AlN-on-Silicon Lamb Wave Micromechanical Resonators
TL;DR: In this article , the effect of orientation on the acoustic band gap (ABG) of two PnC designs and their effect on boosting quality factor (Q) was explored, and it was shown that adding a hole into the disk to form a ring changes its ABG to be much more sensitive to orientation.
Proceedings ArticleDOI
Effect of Undercut due to Isotropic Etch while Releasing on the Performance of TPoS Resonators
TL;DR: In this paper , the effect of additional loss due to the isotropic etch used to release the extensional mode thin piezoelectric on silicon (TPoS) resonators is reported and validated.
Proceedings ArticleDOI
Effect of Undercut due to Isotropic Etch while Releasing on the Performance of TPoS Resonators
TL;DR: In this paper , the effect of additional loss due to the isotropic etch used to release the extensional mode thin piezoelectric on silicon (TPoS) resonators is reported and validated.
References
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Journal ArticleDOI
A Study on the Effects of Release Area on the Quality Factor of Contour-Mode Resonators by Laser Doppler Vibrometry
TL;DR: A design modification was determined that eliminated the issue of undercutting of the device layers outside of the anchors of a 220-MHz aluminum nitride contour-mode resonator.
Proceedings ArticleDOI
Compensation, tuning, and trimming of MEMS resonators
TL;DR: An overview of compensation, tuning, and trimming techniques for MEMS resonators is presented in this article, where the use of these techniques in implementation of high precision and high performance MEMS Resonators is described, and the benefits and challenges of different approaches are discussed.
Proceedings ArticleDOI
The effect of charge redistribution on limiting the kt 2 .Q product of piezoelectrically transduced resonators
TL;DR: In this paper, the authors introduced a new loss mechanism that can significantly limit the quality factor (Q) of piezoelectrically transduced resonators, and they showed that the electromagnetic energy dissipated in the anharmonic process of free charge redistribution on metallic electrodes placed on commonly used piezolectric materials sets a limit for the resonator Q that is frequency independent and is much smaller than the Akheiser Q limit at frequencies less than 1 GHz.
Journal ArticleDOI
Study of Energy Loss Mechanisms in AlN-Based Piezoelectric Length Extensional-Mode Resonators
TL;DR: In this paper, anomalous low quality factors were investigated in AlN thin film-based length extensional (LE)-mode resonators using finite element method (FEM), analytical modeling, and experimental techniques.
Journal ArticleDOI
Dependence of temperature coefficient of frequency (TCf) on crystallography and eigenmode in N-doped silicon contour mode micromechanical resonators
TL;DR: In this paper, the effect of crystal orientations on the temperature coefficient of frequency (TCf) of single crystal silicon square-plate micromechanical resonators vibrating in two distinct contour modes: Lame mode and square extensional (SE).