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Effect of the Addition of α-Si3N4 on the Direct Nitridation of Silicon Powder at Atmospheric Pressure

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TLDR
In this article, the effect of adding α-Si3N4 diluent on the nitridation of silicon powder was studied at 1550 and atmospheric pressure, and the results showed that the conversion of silicon is improved considerably by increasing the adding proportion of αSi3 N4 dilument, and that the sinterability of silicon nitride decreases as the content of β phase increases.
Abstract
Effect of the addition of α-Si3N4 on the nitridation of silicon powder was studied at 1550 and atmospheric pressure. Silicon powder of 2.2μm in size and 99.99% in purity was adopted as experimental materials, α-Si3N4 powder of 2.2μm in size and 99% in purity was used as diluent, and nitrogen of 99.9993% in purity was used as reaction gas. The morphologies and phase compositions of the products were analyzed by SEM and XRD respectively. The results show that the conversion of silicon is improved considerably by increasing the adding proportion of α-Si3N4 diluent. When the adding proportion of α-Si3N4 increases from 10% to 50%, the conversion of silicon powder increases from 38% to 92.55%. The content of β-Si3N4 in product decreases, after an initial increase, with the adding proportion of α-Si3N4 increases, and it reaches the peak point when the adding proportion of α-Si3N4 was 30%. The sinterability of silicon nitride decreases as the content of β phase increases, so the adding proportion of α-Si3N4 should be kept away from 30%.

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Citations
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Journal ArticleDOI

Low-temperature preparation of Si3N4 whiskers bonded/reinforced SiC porous ceramics via foam-gelcasting combined with catalytic nitridation

TL;DR: In this paper, porous α-Si 3 N 4 whiskers were successfully prepared at as low as 1473 K for 2h, via a combined foam-gelcasting and catalytic nitridation route using commercial Si and SiC powders containing some Fe impurity as the main raw materials.
Journal ArticleDOI

Kinetic study on the direct nitridation of silicon powders diluted with α-Si 3 N 4 at normal pressure

TL;DR: In this paper, the effects of nitriding temperature and reaction time on the conversion rate of silicon powders were determined, and a simple model was derived to describe the reaction between silicon and nitrogen, revealing an asymptotic exponential trend of the silicon conversion rate with time.
Journal ArticleDOI

Low-temperature preparation of Si3N4/SiC porous ceramics via foam-gelcasting and microwave-assisted catalytic nitridation

TL;DR: Si3N4/SiC porous ceramics were fabricated by a novel foam-gelcasting and microwave-assisted catalytic nitridation method at a temperature as low as 1273 K for 60 min or after only 10 min at 1373 K as discussed by the authors.
Journal ArticleDOI

Effect of Si3N4 diluent on direct nitridation of silicon powder

TL;DR: In this paper, the effect of the Si3N4 diluent on the direct nitridation of silicon powder was investigated in detail, and the results revealed that both the α-Si3N 4 and β-Si 3N 4 diluents mainly function as heat accepters.
References
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Journal ArticleDOI

Silicon Nitride and Related Materials

TL;DR: Silicon nitride has been researched intensively, largely in response to the challenge to develop internal combustion engines with hot-zone components made entirely from ceramics as mentioned in this paper, but this research effort has succeeded in generating a degree of understanding of silicon nitride and of its processing and properties.
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3D Studies of Indentation by Combined X-Ray Tomography and Digital Volume Correlation

TL;DR: In this paper, three-dimensional digital image correlation (digital volume correlation) is applied to study deformation beneath indentations, mapping the relative displacements between high-resolution synchrotron X-ray computed tomographs (0.9 μm voxel size).
Journal ArticleDOI

The α/β silicon nitride phase transformation

TL;DR: In this paper, the authors reviewed the literature on the α/β silicon nitride transformation and concluded that α and β are probably low and high temperature forms of silicon oxide, respectively, and that the transformation occurs via a solution-precipitation mechanism.
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Carbothermal Preparation of Silicon Nitride: Influence of Starting Material and Synthesis Parameters

TL;DR: In this paper, a starting material combination of C and SiO2 was found to yield pure Si3N4 after about 2 h at 1550°C and 1.3 MPa.
Journal ArticleDOI

Preparation of silicon nitride single crystals by chemical vapor deposition

TL;DR: The effect of temperature and nitrogen partial pressure on the character of the deposited material was studied in more detail in this article, where felt-like fibers, whiskers, and thin plates of silicon nitride were also produced.
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