Effects of aluminum content and substrate temperature on the structural and electrical properties of aluminum-doped ZnO films prepared by ultrasonic spray pyrolysis

TLDR: In this paper, a vertical type hot wall furnace was used as a reactor in the deposition system Zinc acetate dissolved in methanol was selected as a precursor, and the substrate temperature was varied from 180 °C to 240 °C.

Abstract: Transparent conductive aluminum-doped zinc oxide (AZO) films were prepared by an ultrasonic spray pyrolysis method. A vertical type hot wall furnace was used as a reactor in the deposition system Zinc acetate dissolved in methanol was selected as a precursor. The substrate temperature was varied from 180 °C to 240 °C. Aluminum (Al) was doped into ZnO films by incorporating anhydrous aluminum chloride AlCl3 in the zinc acetate CH3CO2)2Zn solution. The proportion of the Al in the starting solution was varied from 0 wt % to 3.0 wt %. The crystallographic properties and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The resistivity of the films was measured by the Van der Pauw method, and the mobility and carrier concentration were obtained through Hall effect measurements. Transmittance was measured in the visible region. The effects of substrate temperature and aluminum content in the starting solution on the structural and electrical properties of the AZO films are discussed.