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Journal ArticleDOI

Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering

Kun Ho Kim, +2 more
- 15 Jun 1997 - 
- Vol. 81, Iss: 12, pp 7764-7772
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TLDR
In this paper, the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO) films are investigated in terms of the preparation conditions, such as the Al2O3 content in the target, rf power, substrate temperature and working pressure.
Abstract
Aluminum doped zinc oxide (AZO) films are prepared by rf magnetron sputtering on glass or Si substrates using specifically designed ZnO targets containing different amount of Al2O3 powder as the Al doping source. The structural, electrical, and optical properties of the AZO films are investigated in terms of the preparation conditions, such as the Al2O3 content in the target, rf power, substrate temperature and working pressure. The crystal structure of the AZO films is hexagonal wurtzite. The orientation, regardless of the Al content, is along the c axis perpendicular to the substrate. The doping concentration in the film is 1.9 at. % for 1 wt % Al2O3 target, 4.0 at. % for 3 wt % Al2O3 target, and 6.2 at. % for 5 wt % Al2O3 target. The resistivity of the AZO film prepared with the 3 wt % Al2O3 target is ∼4.7×10−4 Ω cm, and depends mainly on the carrier concentration. The optical transmittance of a 1500-A-thick film at 550 nm is ∼90%. The optical band gap depends on the Al doping level and on the microstr...

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Citations
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Journal ArticleDOI

Searching for better plasmonic materials

TL;DR: A comparative study of various materials including metals, metal alloys and heavily doped semiconductors is presented in this article, where the performance of each material is evaluated based on quality factors defined for each class of plasmonic devices.
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Searching for Better Plasmonic Materials

TL;DR: A comparative study of various materials including metals, metal alloys and heavily doped semiconductors is presented and an approach for realizing optimal plasmonic material properties for specific frequencies and applications is outlined.
Journal ArticleDOI

Oxides and nitrides as alternative plasmonic materials in the optical range [Invited]

TL;DR: In this paper, the authors provide details of fabrication and characterization of these new materials and discuss their suitability for a number of metamaterial and plasmonic applications, as well as their properties.
Journal ArticleDOI

Resistivity of polycrystalline zinc oxide films: current status and physical limit

Klaus Ellmer
- 07 Nov 2001 - 
TL;DR: In this article, the authors present a review of the charge carrier transport in zinc oxide and show that a physical limit due to ionized impurity scattering is reached for homogeneously doped layers, which can be attributed to the clustering of charge carriers connected with increased scattering due to the Z-2 dependence of the scattering cross section on the charge Z.
Journal ArticleDOI

Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties

TL;DR: In this paper, a new technique of the simultaneous excitation of a magnetron sputtering discharge by rf and dc was used for the deposition of undoped ZnO-and Al-doped znO (ZnO:Al) films.
References
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Journal ArticleDOI

Mechanisms behind green photoluminescence in ZnO phosphor powders

TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
Journal ArticleDOI

Transparent conductors—A status review

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
Journal ArticleDOI

Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

TL;DR: Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000-2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment as mentioned in this paper.
Journal ArticleDOI

Band-gap widening in heavily Sn-doped In 2 O 3

TL;DR: In this article, the optical properties of evaporated films of doped semiconducting In2O3 in the 2-6eV range were investigated, i.e., around the fundamental bandgap.
Journal ArticleDOI

Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

TL;DR: In this paper, a detailed study of electrical properties in group III impurity doped ZnO thin films prepared by rf magnetron sputtering is described, and it is shown that the resistivity dependence on film thickness below 300 nm.
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