Journal ArticleDOI
Effects of channel shapes on MOSFET hot-electron resistance
TLDR
In this paper, the effect of hot-electron effects on transistors with funnel-shaped channel regions was studied in terms of hot electron effects and it was suggested that future transistor design could take advantage of this effect in obtaining optimum hotelectron-resistant transistors.Abstract:
Transistors with funnel-shaped channel regions are studied in terms of hot-electron effects. Experimental results indicate that funnel-shaped transistors are more resistant to hot-electron effects when operating with the wider-channel region close to the drain. It is suggested that future transistor design could take advantage of this effect in obtaining optimum hot-electron-resistant transistors.read more
Citations
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Journal ArticleDOI
Stress-induced double-hump substrate current in MOSFET's
TL;DR: In this article, the authors show that a high lateral electric field is generated near the source when the negative charges are trapped there, which is responsible for the observed double-hump substrate current and enhanced gate current injection under reverse-mode measurements for the stressed transistors.
Charge Injection and Clock Feedthrough
TL;DR: Yu et al. as discussed by the authors introduced a basic charge injection/clock feedthrough model to identify key components and explain fundamental behavior, which can be expanded upon by using Technology Computer Aided Design (TCAD) simulations.
Journal ArticleDOI
Relationship between short channel behavior and long term stability of n-channel enhancement and depletion MOSFETs
TL;DR: In this article, the authors investigated the effect of short channel effects and hot carrier related instabilities on MOSFETs and concluded that the conventional approaches used for optimization of long term stability and d.c. characteristics of small size MOSFs are technologically incompatible.
Journal ArticleDOI
Observation of double-hump substrate current in funnel-shape transistors
T.Y. Huang,J.Y. Chen +1 more
TL;DR: In this paper, the double-hump effect in substrate current and associated enhanced gate current injection in FS-transistors when channel length and gate oxide are scaled down were investigated. And the authors found that floating-gate FS-tranistors with short-channel length and thin gate oxide were more efficient in programming when operating in wide-drain mode.
Journal ArticleDOI
Study and Analysis of Enclosed Gate FET’s
TL;DR: The characteristic and parametric dimensioning of Enclosed Layout MOSFET with various geometric sizes and shapes has been taken into consideration for the study of irradiations and leakage at room temperature, which has been confirmed on several technological platforms.
References
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Journal ArticleDOI
Famos—A new semiconductor charge storage device
TL;DR: The floating gate avalanche injection MOS (FAMOS) as discussed by the authors is a new nonvolatile charge storage device that combines the floating gate concept with avalanche injection of electrons from the surface depletion region of a p - n junction to yield reproducible charging characteristics with long term storage retention.
Journal ArticleDOI
Technology of a new n-channel one-transistor EAROM cell called SIMOS
A. Scheibe,H. Schulte +1 more
TL;DR: The stacked-gate injection MOS (SIMOS) as discussed by the authors is an n-channel MOS transistor with a control gate stacked on the floating gate, which is used to accelerate the electrons to energies high enough to overcome the barrier height of the Si-SiO 2 interface.