Patent
Electrical and optical devices incorporating topological materials including topological insulators
Shoucheng Zhang,Xiao Zhang +1 more
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TLDR
In this paper, an electrical device includes a current transport layer formed using a layer of a topological material selected from the group of topological insulators, a quantum anomalous hall (QAH) or topological magnetic insulator.Abstract:
An electrical device includes a current transport layer formed using a layer of a topological material selected from the group of a topological insulator, a quantum anomalous hall (QAH) insulator, a topological insulator variant, and a topological magnetic insulator. In one embodiment, the current transport layer forms a conductive wire on an integrated circuit where the conductive wire includes two spatially separated edge channels, each edge channel carrying charge carriers propagating in one direction only. In other embodiments, an optical device includes an optical layer formed using a layer of the topological material. The optical layer can be a light absorbing layer, a light emitting layer, a light transport layer, or a light modulation layer.read more
Citations
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Non-reciprocal lasing in topological cavities of arbitrary geometries
Boubacar Kante,Babak Bahari +1 more
TL;DR: The experimental demonstration of lasing from topological cavities provides the opportunity to develop complex topological circuitry of arbitrary geometries for the integrated and robust generation and transport of photons in classical and quantum regimes.
Journal ArticleDOI
Imperfect two-dimensional topological insulator field-effect transistors
TL;DR: Two-dimensional topological insulator field-effect transistors that switch based on the modulation of scattering are proposed that can be made enabling high-performance and low-power electronic circuits using imperfect two-dimensionalTopological insulators.
Journal ArticleDOI
Enhanced higher harmonic generation from nodal topology
TL;DR: In this paper, the authors show that nodal linkages enforce non-monotonicity in the intraband semiclassical response of nodal materials, which will be robust against perturbations preserving the nodal topology.
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Electrically conductive thin films
TL;DR: An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure is described in this article.
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Topological insulator structure
TL;DR: In this paper, the magnetically doped TI quantum well film is represented by a chemical formula of Cr y (Bi x Sb 1-x ) 2-y Te 3.
References
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Colloquium: Topological insulators
M. Z. Hasan,Charles L. Kane +1 more
TL;DR: In this paper, the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topologically insulators have been observed.
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Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
TL;DR: In this article, first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Bi2Se3, SbSe3 and BiSe3 were performed.
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Topological insulators in three dimensions.
TL;DR: In this paper, the authors studied three-dimensional generalizations of the quantum spin Hall (QSH) effect and introduced a tight binding model which realized the WTI and STI phases, and discussed its relevance to real materials including bismuth.
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Topological insulators with inversion symmetry
Liang Fu,Charles L. Kane +1 more
TL;DR: In this paper, it was shown that the parity of the occupied Bloch wave functions at the time-reversal invariant points in the Brillouin zone greatly simplifies the problem of evaluating the topological invariants.
Journal ArticleDOI
Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.