Electrical percolation in graphene-polymer composites
Alexander J. Marsden,Dimitrios G. Papageorgiou,Cristina Vallés,Andrea Liscio,Vincenzo Palermo,Mark A. Bissett,Robert J. Young,Ian A. Kinloch +7 more
- Vol. 5, Iss: 3, pp 032003
TLDR
In this paper, the progress in graphene-polymer composites for electrical applications is discussed and the current optimal composites are presented, and the example of strain sensors is used to demonstrate their application.Abstract:
Electrically conductive composites comprising polymers and graphene are extremely versatile and have a wide range of potential applications. The conductivity of these composites depends on the choice of polymer matrix, the type of graphene filler, the processing methodology, and any post-production treatments. In this review, we discuss the progress in graphene-polymer composites for electrical applications. Graphene filler types are reviewed, the progress in modelling these composites is outlined, the current optimal composites are presented, and the example of strain sensors is used to demonstrate their application.read more
Citations
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Dual-Functional Graphene Composites for Electromagnetic Shielding and Thermal Management
Fariborz Kargar,Zahra Barani,Michael Balinskiy,Andres Sanchez Magana,Jacob S. Lewis,Alexander A. Balandin +5 more
TL;DR: Kargar, Fariborz; Barani, Zahra; Balinskiy, Michael; Magana, Andres Sanchez; Lewis, Jacob S.; Balandin, Alexander A. as mentioned in this paper
Journal ArticleDOI
Recent Progress in Graphene/Polymer Nanocomposites.
TL;DR: Recent progress on graphene/polymer nanocomposites is summarized with emphasis on strengthening/toughening, electrical conduction, thermal transportation, and photothermal energy conversion.
Journal Article
Efros-Shklovskii Variable Range Hopping in Reduced Graphene Oxide Sheets
Daeha Joung,Saiful I. Khondaker +1 more
TL;DR: In this article, the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 % were investigated, and it was shown that in the low bias regime, the temperature (T) dependent resistance (R) of all the devices follow Efros-Shklovskii variable range hopping (ES-VRH) R ~ exp[(T(ES)/T)^1/2] with T(ES) decreasing from 30976 to 4225 K and electron localization length increasing from 0.46
References
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Journal ArticleDOI
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