Journal ArticleDOI
Estimating threshold reduction for spin-injected semiconductor lasers
TLDR
In this paper, the magnitude of threshold reduction in a semiconductor laser with electron spin injection is shown to depend on such intrinsic properties of the active region as the dominant recombination mechanism, the ratio of hole-to-electron densities of states, the active-region doping, and the available material gain as well as cavity properties such as the optical loss.Abstract:
The magnitude of threshold reduction in a semiconductor laser with electron spin injection is shown to depend on such intrinsic properties of the active region as the dominant recombination mechanism, the ratio of hole-to-electron densities of states, the active-region doping, and the available material gain as well as cavity properties such as the optical loss. The threshold reduction is expected to be greatest when the laser’s active region is undoped, the recombination is strongly dominated by Auger processes, and the threshold gain is low. It can approach a factor of 3.5 for fully spin-polarized electrons in the active region.read more
Citations
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Ultrafast spin-lasers.
Markus Lindemann,Gaofeng Xu,Tobias Pusch,Rainer Michalzik,Martin R. Hofmann,Igor Žutić,Nils C. Gerhardt +6 more
TL;DR: In this article, the authors show that the coupling between carrier spin and light polarization in common semiconductor spin-laser can enable room-temperature modulation frequencies exceeding 200 GHz.
Journal ArticleDOI
Mapping between quantum dot and quantum well lasers: From conventional to spin lasers
TL;DR: In this paper, the authors explore similarities between the quantum well and quantum dots used as optical gain media in semiconductor lasers and formulate a mapping procedure which allows a simpler, often analytical, description of quantum well lasers to study more complex lasers based on quantum dots.
Journal ArticleDOI
Spin-Controlled Vertical-Cavity Surface-Emitting Lasers
TL;DR: In this paper, the authors discuss the concept of spin-controlled vertical-cavity surface-emitting lasers (VCSELs) and analyze it with respect to potential room-temperature applications in spin-optoelectronic devices.
Journal ArticleDOI
Spin modulation in semiconductor lasers
TL;DR: In this article, the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts, leading to an enhanced bandwidth and desirable switching properties.
References
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Journal ArticleDOI
Diode Lasers and Photonic Integrated Circuits
TL;DR: In this paper, a Phenomenological Approach to Diode Lasers is presented, where mirrors and Resonators are used for diode luminaries, and coupled-mode theory is applied.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
Aubrey T. Hanbicki,O.M.J. van 't Erve,R. Magno,George Kioseoglou,Connie H. Li,Berend T. Jonker,Grigorios Itskos,R. Mallory,M. Yasar,Athos Petrou +9 more
TL;DR: In this article, the authors show that single-step tunneling is the dominant transport mechanism for electron spin polarization in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact.
Journal ArticleDOI
Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
Aubrey T. Hanbicki,O.M.J. van 't Erve,R. Magno,George Kioseoglou,Connie H. Li,Berend T. Jonker,Grigorios Itskos,R. Mallory,M. Yasar,Athos Petrou +9 more
TL;DR: In this paper, a spin polarization of 32% was obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact.
Journal ArticleDOI
Subpicosecond spin relaxation dynamics of excitons and free carriers in GaAs quantum wells.
TL;DR: A coherent undrestanding of spin relaxation of electrons, holes, and excitons in quantum wells is obtained by investing subpicosecond dynamics of luminescence polarization.