Exciton-dominant electroluminescence from a diode of monolayer MoS2
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In this paper, the microscopic origin of electroluminescence from a diode of monolayer MoS2 fabricated on a heavily p-type doped silicon substrate was investigated.Abstract:
In two-dimensional monolayer MoS2, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS2 fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255 eV in the monolayer MoS2 diode, attributed to the excited exciton state of a direct-exciton transition.read more
Citations
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References
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Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
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Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.
TL;DR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.
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Control of valley polarization in monolayer MoS2 by optical helicity
TL;DR: It is demonstrated that optical pumping with circularly polarized light can achieve complete dynamic valley polarization in monolayer MoS(2) (refs 11, 12), a two-dimensional non-centrosymmetric crystal with direct energy gaps at two valleys.
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Valley polarization in MoS2 monolayers by optical pumping
TL;DR: It is demonstrated that optical pumping with circularly polarized light can achieve a valley polarization of 30% in pristine monolayer MoS(2), demonstrating the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS (2) monolayers.