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Open AccessJournal ArticleDOI

Exploring the structural stability, electronic and thermal attributes of synthetic 2D materials and their heterostructures

TLDR
In this paper , the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH) were investigated.
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This article is published in Applied Surface Science.The article was published on 2022-07-01 and is currently open access. It has received 15 citations till now. The article focuses on the topics: Heterojunction & Monolayer.

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Emergence of Rashba splitting and spin-valley properties in Janus MoGeSiP2As2 and WGeSiP2As2 monolayers

TL;DR: In this article , the structural stability and spintronics properties of the Janus MoGeSiP2As2 and WGeSiPs 2As2 monolayers were investigated.
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Strain modulated electronic and optical properties of laterally stitched MoSi2N4/XSi2N4 (X=W, Ti) 2D heterostructures

TL;DR: In this article , the effect of biaxial strain on the electronic and optical properties of the laterally stitched monolayered MoSi2N4/WSi 2N4-lateral heterostructure (MWLH) was investigated.
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Atomic-size dependence of the cohesive energy, bandgap, Young's modulus, and Raman frequency in different MA2Z4: A bond relaxation investigation

TL;DR: In this article , the authors established the common origin of the atomic-size dependence of the bandgap, phonon frequency, and mechanical strength in various monolayered MA2Z4 monolayers by developing a bond relaxation theory approach.
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Correlation-Driven Topological Transition in Janus Two-Dimensional Vanadates

TL;DR: In this paper , the magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications, and the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction.
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Laser Irradiation Effect on the p-GaSe/n-HfS2 PN-Heterojunction for High-Performance Phototransistors.

TL;DR: In this paper , a p-GaSe/n-HfS2 van der Waals (vdW) heterostructure for high-performance photodetectors and investigated the laser irradiation effect on the fabricated device.
References
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Journal ArticleDOI

Generalized Gradient Approximation Made Simple

TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.

TL;DR: An efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set is presented and the application of Pulay's DIIS method to the iterative diagonalization of large matrices will be discussed.
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Projector augmented-wave method

TL;DR: An approach for electronic structure calculations is described that generalizes both the pseudopotential method and the linear augmented-plane-wave (LAPW) method in a natural way and can be used to treat first-row and transition-metal elements with affordable effort and provides access to the full wave function.
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Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
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Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
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