Journal ArticleDOI
Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide
Ata Khalid,Ali A. Rezazadeh +1 more
- Vol. 143, Iss: 1, pp 7-11
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TLDR
Ion-implanted GaAs MESFETs with transparent indium oxide (ITO) gate electrodes have been fabricated using both sputtered and evaporated ITO gates.Abstract:
Ion-implanted GaAs MESFETs with transparent indium oxide (ITO) gate electrodes have been fabricated using both sputtered and evaporated ITO gates. High-quality ITO films with transparency greater than 90% and low sheet resistance of 8/spl Omega///spl square/ have been used in the fabrication of RF sputtered transparent gates. Transparent-gate FETs have also been fabricated using thermally evaporated ITO which have shown excellent electrical device performance comparable to the conventional GaAs MESFET. The optical responsivity of these devices is about 4.5 A/W for a radiation wavelength of 6328 /spl Aring/. Fabrication details are also discussed for optoelectronic devices with transparent electrodes where the fine-structure processing are not compatible with standard lithography techniques.read more
Citations
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Journal ArticleDOI
Organosilane-functionalization of nanostructured indium tin oxide films
Raquel Pruna,Francisco Palacio,M. Martínez,O. Blázquez,Sergi Hernández,B. Garrido,Manel López +6 more
TL;DR: Electrochemical measurements may point to a new exploitable oxide-based nanostructured material for biosensing applications, as a first step towards sensing, rapid functionalization of such substrates and their application to electrochemical analysis is tested.
Journal ArticleDOI
High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
TL;DR: In this article, lattice-matched (LM) InAlN/AlGaN heterostructure field effect transistors (HFETs) gated by transparent ITO films were demonstrated.
Journal ArticleDOI
A linear model application for the design of transparent conductive In203 coatings
TL;DR: In this paper, a linear programming method for the production design of these thin films using a sputtering process was proposed, based on the random partial sections in a multi-factor's space.
Journal ArticleDOI
A new analytical model for photo-dependent capacitances of GaAs MESFET's with emphasis on the substrate related effects
TL;DR: In this paper, a new analytical model for optical and bias dependent nonlinear capacitances of GaAs MESFET which is valid for both linear and saturation regions has been proposed.
References
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Journal ArticleDOI
Optical control of microwave semiconductor devices
Alwyn J. Seeds,A.A.A. de Salles +1 more
TL;DR: The use of optically controlled devices to perform a range of circuit functions is reviewed in this article, where the optical control of amplifier performance is discussed and future directions for research in this area are discussed.
Journal ArticleDOI
Microwave Performance of an Optically Controlled AIGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET
TL;DR: In this article, the light-induced voltage, the increase in the drain current, the RF gain, and the change in the microwave scattering parameters of an AIGaAs/GaAs high electron mobility transistor (HEMT) under optical illumination of photon energy equal to or greater than the semiconductor band gap are computed.
Journal ArticleDOI
Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical-cavity surface-emitting lasers
Mohammad Matin,A.F. Jezierski,S.A. Bashar,D.E. Lacklison,Trevor M. Benson,Tin S. Cheng,J.S. Roberts,Terry E. Sale,J.W. Orton,C. T. Foxon,A.A. Rezazadeh +10 more
TL;DR: The first successful fabrication of an InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) using optically transparent indium-tinoxide (ITO) ohmic contacts to p-and n-type regions of the laser was reported in this paper.
Journal ArticleDOI
An improved model of ion-implanted GaAs OPFET
TL;DR: In this article, a seminumerical model of an ion-implanted GaAs optical-field effect transistor (OPFET) was presented to overcome the limitations of the existing model without changing the basic approach, and analytical expressions obtained using the one-dimensional Poisson's equation were solved numerically to obtain the I-V characteristics of the device in dark and illuminated conditions.