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Journal ArticleDOI

Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

TLDR
In this paper, the authors report advances in nano-print lithography, its application in nanogap metal contacts, and related fabrication yield, and demonstrate 5nm linewidth and 14nm linepitch in resist using nanoimprint at room temperature with a pressure less than 15psi.
Abstract
We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5nm linewidth and 14nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4in. wafer were demonstrated.

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Journal ArticleDOI

Nanoimprint Lithography: Methods and Material Requirements**

L. Jay Guo
- 19 Feb 2007 - 
TL;DR: In this paper, the basic principles of nano-printing are discussed, with an emphasis on the requirements on materials for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication.
Journal ArticleDOI

Nanoimprint lithography: An old story in modern times? A review

TL;DR: Nanoimprint lithography (NIL) is a high throughput, high-resolution parallel patterning method in which a surface pattern of a stamp is replicated into a material by mechanical contact and three dimensional material displacement.
Book

Reconfigurable Computing: The Theory and Practice of FPGA-Based Computation

Scott Hauck, +1 more
TL;DR: This book is intended as an introduction to the entire range of issues important to reconfigurable computing, using FPGAs as the context, or "computing vehicles" to implement this powerful technology.
References
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Journal ArticleDOI

Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device.

TL;DR: A molecule containing a nitroamine redox center was used in the active self-assembled monolayer in an electronic device that exhibited negative differential resistance and an on-off peak-to-valley ratio in excess of 1000:1.
Journal ArticleDOI

Coulomb blockade and the Kondo effect in single-atom transistors

TL;DR: Two related molecules containing a Co ion bonded to polypyridyl ligands, attached to insulating tethers of different lengths are examined, enabling the fabrication of devices that exhibit either single-electron phenomena, such as Coulomb blockade or the Kondo effect.
Journal ArticleDOI

Reproducible Measurement of Single-Molecule Conductivity

TL;DR: It is shown that the measurement of intrinsic molecular properties requires chemically bonded contacts, and nonbonded contacts to octanethiol monolayers were at least four orders of magnitude more resistive, less reproducible, and had a different voltage dependence.
Journal ArticleDOI

Sub-10 nm imprint lithography and applications

TL;DR: A new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput is presented.
Journal ArticleDOI

Ultrahigh-Density Nanowire Lattices and Circuits

TL;DR: A general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits based on translating thin film growth thickness control into planar wire arrays is described.
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