Journal ArticleDOI
Facile encapsulation of oxide based thin film transistors by atomic layer deposition based on ozone.
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TLDR
A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated, ensuring the threshold voltage remains unaltered and the hysteresis is permanently reduced.Abstract:
A simplified encapsulation strategy for metal-oxide based TFTs, using ozone instead of water as an oxygen source in a low-temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy- and time-consuming post-treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al2 O3 , TiO2 , ZrO2 ) and metal-oxide channel semiconductors (e.g., zinc-tin-oxide (ZTO), indium-gallium-zinc-oxide (IGZO)).read more
Citations
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Journal ArticleDOI
Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.
TL;DR: This study demonstrates for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process.
Journal ArticleDOI
A Sustainable Approach to Flexible Electronics with Zinc‐Tin Oxide Thin‐Film Transistors
Cristina Fernandes,Ana Santa,Ângelo Santos,Pydi Ganga Bahubalindruni,Jonas Deuermeier,Rodrigo Martins,Elvira Fortunato,Pedro Barquinha +7 more
TL;DR: In this paper, the performance of flexible zinc-tin oxide (ZTO) thin-film transistors (TFTs) processed at only 180 °C is reported. But no critical elements as In and Ga are used, device performance approaches the one of indium-gallium-zinc oxide TFTs.
Journal ArticleDOI
Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant
Dong-won Choi,Jin-Seong Park +1 more
TL;DR: In this article, high conductive SnO 2 thin films were grown by atomic layer deposition (ALD) in a wide growth temperature range (50°C-250°C), using a tetrakis-dimethyl-amine tin (TDMASn) precursor and an ozone reactant.
Journal ArticleDOI
Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone.
Hanearl Jung,Woo-Hee Kim,Bo Eun Park,Whang Je Woo,Il Kwon Oh,Su Jeong Lee,Yun Cheol Kim,Jae Min Myoung,Satoko Gatineau,Christian Dussarrat,Hyungjun Kim +10 more
TL;DR: It is envisioned that the O3-ALD Y2O3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.
Journal ArticleDOI
Facile passivation of solution-processed InZnO thin-film transistors by octadecylphosphonic acid self-assembled monolayers at room temperature
TL;DR: In this paper, a simple passivation method is developed to overcome the water susceptibility of solution-processed InZnO thin-film transistors by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs).
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
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Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
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Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
TL;DR: In this paper, the effect of water exposure on amorphous indium-gallium-zinc oxide (a-IGZO) semiconductors was investigated and two competing mechanisms depending on the thickness of the active channel were clarified.
Journal ArticleDOI
ZnO-based transparent thin-film transistors
TL;DR: In this article, the authors proposed a transparent ZnO-based thin-film transistors (TFTs) for select-transistors in each pixel of an active-matrix liquid-crystal display.
Journal ArticleDOI
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
TL;DR: In this article, transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated.