Patent
Gate dielectric based on oxynitride grown in N2 O and annealed in NO
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TLDR
In this article, gate oxynitride was first grown in N 2 O and then annealed by in-situ rapid thermal NO-nitridation, which has the advantage of providing a tighter nitrogen distribution and a higher nitrogen accumulation at or near the Si-SiO 2 interface than either N 2O oxynite or nitridation of SiO 2 in the NO ambient.Abstract:
A new technique for the formation of high quality ultrathin gate dielectrics is proposed. Gate oxynitride was first grown in N 2 O and then annealed by in-situ rapid thermal NO-nitridation. This approach has the advantage of providing a tighter nitrogen distribution and a higher nitrogen accumulation at or near the Si--SiO 2 interface than either N 2 O oxynitride or nitridation of SiO 2 in the NO ambient. It is applicable to a wide range of oxide thickness because the initial rapid thermal N 2 O oxidation rate is slow but not as self-limited as NO oxidation. The resulting gate dielectrics have reduced charge trapping, lower stress-induced leakage current and significant resistance to interface state generation under electrical stress.read more
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References
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Proceedings ArticleDOI
Stress induced leakage current limiting to scale down EEPROM tunnel oxide thickness
TL;DR: In this paper, the effects of thinning the FLOTEX EEPROM tunnel oxide on its reliability were investigated using capacitors and cell structures with oxide thickness ranging from 47 to 100 AA.
Journal ArticleDOI
Rapid thermal oxidation of silicon in N2O between 800 and 1200°C: Incorporated nitrogen and interfacial roughness
Martin L. Green,D. Brasen,K. W. Evans-Lutterodt,Leonard C. Feldman,K. Krisch,W. Lennard,H.‐T. Tang,L. Manchanda,Mau‐Tsu Tang +8 more
TL;DR: In this article, the authors used thermal oxidation to grow O2 and N2O•oxides of technological importance (∼10 nm thick) in the temperature range 800-1200 C.
Journal ArticleDOI
Inversion layer mobility under high normal field in nitrided-oxide MOSFETs
TL;DR: In this paper, a comprehensive study on the inversion layer mobility improvement of n-channel MOSFETs with nanometer-range ultra-thin (reoxidized) nitrided oxides is presented.
Journal ArticleDOI
Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O Ambient
TL;DR: In this paper, a novel method of nitridation of thin SiO2 film (30 C/cm2) was proposed, which indicates a quite uniform interface ordered within at least one or two atomic layers.