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Journal ArticleDOI

High-Efficiency Transient Temperature Calculations for Applications in Dynamic Thermal Management of Electronic Devices

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TLDR
This work formulates an efficient method for fast calculations of temperature response in semiconductor devices under a time-dependent dissipation power and uses z-transforms to significantly decrease the amount of computations needed per temperature evaluation, in addition to much reduced memory requirements.
Abstract
The highly nonuniform transient power densities in modern semiconductor devices present difficult performance and reliability challenges for circuit components, multiple levels of interconnections and packaging, and adversely impact overall power efficiencies. Runtime temperature calculations would be beneficial to architectures with dynamic thermal management, which control hotspots by effectively optimizing regional power densities. Unfortunately, existing algorithms remain computationally prohibitive for integration within such systems. This work addresses these shortcomings by formulating an efficient method for fast calculations of temperature response in semiconductor devices under a time-dependent dissipation power. A device temperature is represented as output of an infinite-impulse response (IIR) multistage digital filter, processing a stream of sampled power data; this method effectively calculates temperatures by a fast numerical convolution of the sampled power with the modeled system's impulse response. Parameters such as a steady-state thermal resistance or its extension to a transient regime, a thermal transfer function, are typically used with the assumption of a linearity and time-invariance (LTI) to form a basis for device thermal characterization. These modeling tools and the time-discretized estimates of dissipated power make digital filtering a well-suited technique for a run-time temperature calculation. A recursive property of the proposed algorithm allows a highly efficient use of an available computational resource; also, the impact of all of the input power trace is retained when calculating a temperature trace. A network identification by deconvolution (NID) method is used to extract a time-constant spectrum of the device temperature response. We verify this network extraction procedure for a simple geometry with a closed-form solution. In the proposed technique, the amount of microprocessor clock cycles needed for each temperature evaluation remains fixed, which results in a linear relationship between the overall computation time and the number of temperature evaluations. This is in contrast to time-domain convolution, where the number of clock cycles needed for each evaluation increases as the time window expands. The linear dependence is similar to techniques based on FFT algorithms; in this work, however, use of z-transforms significantly decreases the amount of computations needed per temperature evaluation, in addition to much reduced memory requirements. Together, these two features result in vast improvements in computational throughput and allow implementations of sophisticated runtime dynamic thermal management algorithms for all high-power architectures and expand the application range to embedded platforms for use in a pervasive computing environment.

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Evaluating broader impacts of nanoscale thermal transport research

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Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs

TL;DR: In this article, the authors developed an ultrafast high-resolution thermoreflectance (TR) imaging technique to directly observe the increase in local surface temperature of the gate-all-around (GAA) MOSFET with different number of nanowires.
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Limits to Fourier theory in high thermal conductivity single crystals

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3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature

TL;DR: In this article, a 3D electrothermal simulation model is developed to explore and interpret self-heating and heat dissipation in gate-all-around (GAA) devices.
Proceedings ArticleDOI

Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs

TL;DR: In this article, the authors developed an ultra-fast, high-resolution thermo-reflectance (TR) imaging technique to directly observe the increase in local surface temperature of the gate-all-around MOSFET with different number of nanowires (NWs), characterize/interpret the time constants of heating and cooling through high resolution transient measurements, identify critical paths for heat dissipation, and detect in-situ time-dependent breakdown of individual NW.
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Proceedings ArticleDOI

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Journal ArticleDOI

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Journal ArticleDOI

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Journal ArticleDOI

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