Journal ArticleDOI
High-Gain Millimeter-Wave AlGaN/GaN Transistors
TLDR
In this paper, the fabrication and performance of common-source (CS) and common-gate transistors for operation at millimeter-wave frequencies are presented, and the advantages of the dual-gate (DG) devices in power gain over the CS high electron mobility transistors are discussed.Abstract:
In this paper, the fabrication and performance of common-source (CS) and common-gate transistors for operation at millimeter-wave frequencies are presented. The AlGaN/GaN devices have a gate length of 100 nm and yield a high maximum transconductance of above 550 mS/mm with a very low contact resistance of less than 0.12 Ω·mm. The baseline technology with its optimized epitaxial structures and their transition frequency of more than 80 GHz allows reproducible designs for monolithic microwave integrated circuits up to the W-band frequency range (75-110 GHz). In addition, GaN dual-gate (DG) devices were developed for substantial improvement of the bandwidth of the devices and of the gain per stage on circuit level. This paper discusses the advantages of the DG devices in power gain over the CS high electron mobility transistors for millimeter-wave applications.read more
Citations
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Journal ArticleDOI
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
TL;DR: In this article, the authors presented the DC and microwave characteristics of a novel 30-nm T-gate InAlN/Aln/GaN HEMT with AlGaN back-barrier, which was simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature.
Proceedings ArticleDOI
A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
TL;DR: In this article, a power amplifier using second-harmonic input and output matching is designed, manufactured, and measured, and the presented single-transistor MMIC exhibits a small-signal gain of more than 9 dB at 38 GHz and delivers 269 mW (24.3 dBm) of output power at GHz.
Journal ArticleDOI
Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
TL;DR: In this article, a 50-nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed.
Dissertation
Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz
TL;DR: In this article, the reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on silicon substrate dedicated to power applications at frequency above 40GHz was investigated.
Journal ArticleDOI
DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications
TL;DR: The DC and microwave characteristics of 20-nm gate length (Lg) InAlN/GaN High electron mobility transistor (HEMT) on SiC substrate with heavily doped source and drain region have investigated for both depletion mode (D-mode) and enhancement mode (Emode) operation using Synopsys TCAD tool.
References
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Journal ArticleDOI
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
TL;DR: In this article, a 2.6-μm-thick GaN film with a resistivity of 7×109 Ω/sq was attained when the first 0.3 μm of the film was Fe doped.
Journal ArticleDOI
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
TL;DR: Carbon doping via CBr4 in AlGaN/GaN high electron mobility transistors grown by rf-plasma-assisted molecular beam epitaxy on 4H-SiC (0001) was investigated as a means to reduce buffer leakage.
Proceedings ArticleDOI
GaN HFET for W-band Power Applications
Miroslav Micovic,A. Kurdoghlian,Paul Hashimoto,M. Hu,M. Antcliffe,P. J. Willadsen,W.-S. Wong,R. Bowen,Ivan Milosavljevic,Adele E. Schmitz,M. Wetzel,David H. Chow +11 more
TL;DR: In this paper, the first W-band GaN MMIC with 150 mm of output gate periphery produces 316 mW of continuous wave output power (Power density = 2.1 W/m) at a frequency of 80.5 GHz and has associated power gain of 17.5 dB.
Proceedings ArticleDOI
W-Band GaN MMIC with 842 mW output power at 88 GHz
Miroslav Micovic,A. Kurdoghlian,Keisuke Shinohara,Ivan Milosavljevic,Shawn D. Burnham,M. Hu,Andrea Corrion,W.-S. Wong,Adele E. Schmitz,Paul Hashimoto,P. J. Willadsen,David H. Chow,Andy Fung,Robert Lin,Lorene Samoska,Pekka Kangaslahti,Bjorn Lambrigtsen,Paul F. Goldsmith +17 more
TL;DR: In this article, the authors reported W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology.
Journal ArticleDOI
Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)
Christiane Poblenz,P. Waltereit,Siddharth Rajan,Umesh Mishra,James S. Speck,P. Chin,I. P. Smorchkova,B. Heying +7 more
TL;DR: In this paper, the effect of the AlN nucleation layer growth conditions on buffer leakage in unintentionally doped AlGaN∕GaN high electron mobility transistors was investigated.