Journal ArticleDOI
High Temperature Sensors Based on Metal–Insulator–Silicon Carbide Devices
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TLDR
In this paper, high temperature gas sensors based on catalytic metal-insulator-silicon carbide (MISiC) devices are developed both as capacitors and Schottky diodes.Abstract:
High temperature gas sensors based on catalytic metal-insulator-silicon carbide (MISiC) devices are developed both as capacitors and Schottky diodes. A maximum operation temperature of 1000 degrees C is obtained for capacitors based on 4H-SiC, and all sensors work routinely for several weeks at 600 degrees C. Reducing gases like hydrocarbons and hydrogen lower the flat band voltage of the capacitor and the barrier height of the diode. The time constants for the gas response are in the order of milliseconds and because of this good performance the sensors are tested for combustion engine control. For temperatures around 600 degrees C total combustion occurs on the sensor surface and the signal is high for fuel in excess and low for air in excess. At temperatures around 400 degrees C the response is more linear. The high temperature operation causes interdiffusion of the metal and insulator layers in these devices; and this interdiffusion has been studied. At sufficiently high temperatures the inversion capacitance shows different levels for hydrogen free and hydrogen containing ambients, which is suggested to be due to a reversible hydrogen annealing effect at the insulator-silicon carbide interface.read more
Citations
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Journal ArticleDOI
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
Stephen J. Pearton,B. S. Kang,Suku Kim,Fan Ren,Brent P. Gila,C. R. Abernathy,Jenshan Lin,S N G Chu +7 more
TL;DR: In this article, the authors discuss the advances in use of GaN-based solid-state sensors for these applications and discuss their potential for a wide range of chemical, gas, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications.
Journal ArticleDOI
SiC sensors: a review
TL;DR: In this paper, the current status of SiC technology for a wide range of sensor applications is reviewed, and it is shown that SiC MEMs devices are well-established with operational devices demonstrated at high temperatures (up to 500 °C) for the sensing of motion, acceleration and gas flow.
Journal ArticleDOI
Membrane-Based Self-Powered Triboelectric Sensors for Pressure Change Detection and Its Uses in Security Surveillance and Healthcare Monitoring
Peng Bai,Peng Bai,Guang Zhu,Guang Zhu,Qingshen Jing,Jin Yang,Jun Chen,Yuanjie Su,Jusheng Ma,Gong Zhang,Zhong Lin Wang,Zhong Lin Wang +11 more
TL;DR: In this article, a membrane-based triboelectric sensor (M-TES) is presented as a self-powered pressure change sensor, which generates a voltage induced by surface TES charges in response to an air pressure change.
Journal ArticleDOI
Hydrogen response mechanism of Pt-GaN Schottky diodes
J. Schalwig,Gerhard Müller,U. Karrer,Martin Eickhoff,Oliver Ambacher,Martin Stutzmann,L. Görgens,Günther Dollinger +7 more
TL;DR: In this article, a GaN-based Schottky diodes with catalytically active platinum electrodes was used to detect hydrogen in high-temperature gas sensor devices and the results indicated an interfacial effect as the origin of the sensor response to hydrogen.
Journal ArticleDOI
Gas sensitive GaN/AlGaN-heterostructures
TL;DR: In this paper, high electron mobility transistors (HEMT) based on GaN/AlGaN-heterostructures have been fitted with catalytically active platinum (Pt) gate electrodes to induce gas sensitivity.
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TL;DR: In this paper, the authors proposed a sensor element based on semiconducting metal oxides for individual cylinder control in automobiles and for monitoring pollutant components in order to obtain the most efficient combustion and the least emission of pollutants.