Journal ArticleDOI
Gas sensors for high temperature operation based on metal oxide silicon carbide (MOSiC) devices
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TLDR
In this article, the authors used catalytic metal gate capacitors operating at about 800 degrees Celsius (C) for high temperature gas sensor devices, where hydrogen or hydrogen containing molecules were used.Abstract:
Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800-degrees-C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, ...read more
Citations
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New materials for micro-scale sensors and actuators An engineering review
Stephen A. Wilson,Renaud Jourdain,Qi Zhang,Robert A. Dorey,Christopher R. Bowen,Magnus Willander,Qamar Ul Wahab,Safaa Al-Hilli,Omer Nur,Eckhard Quandt,Christer Johansson,E. Pagounis,Manfred Kohl,Jovan Matovic,Björn Samel,Wouter van der Wijngaart,Edwin Jager,Daniel O Carlsson,Zoran Djinovic,Michael Wegener,Carmen Moldovan,Rodica Iosub,E. Abad,Michael Wendlandt,Cristina Rusu,Katrin Persson +25 more
TL;DR: In this paper, a detailed overview of developments in transducer materials technology relating to their current and future applications in micro-scale devices is provided. And a short discussion of structural polymers that are extending the range of micro-fabrication techniques available to designers and production engineers beyond the limitations of silicon fabrication technology is presented.
Journal ArticleDOI
A review on chemiresistive room temperature gas sensors based on metal oxide nanostructures, graphene and 2D transition metal dichalcogenides
Nirav Joshi,Nirav Joshi,Takeshi Hayasaka,Yumeng Liu,Huiliang Liu,Huiliang Liu,Osvaldo N. Oliveira,Liwei Lin,Liwei Lin +8 more
TL;DR: The review summarizes the most significant progresses related to room temperature gas sensing by using hierarchical oxide nanostructures, graphene and its derivatives and 2D transition metal dichalcogenides, highlighting the peculiar gas sensing behavior with enhanced selectivity, sensitivity and long-term stability.
Journal ArticleDOI
Silicon carbide MEMS for harsh environments
TL;DR: In this paper, a review of silicon carbide for microelectromechanical systems (SiC MEMS) is presented, where current efforts in developing SiC MEMs to extend the silicon-based MEMS technology to applications in harsh environments are discussed.
Journal ArticleDOI
GaN-based diodes and transistors for chemical, gas, biological and pressure sensing
Stephen J. Pearton,B. S. Kang,Suku Kim,Fan Ren,Brent P. Gila,C. R. Abernathy,Jenshan Lin,S N G Chu +7 more
TL;DR: In this article, the authors discuss the advances in use of GaN-based solid-state sensors for these applications and discuss their potential for a wide range of chemical, gas, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications.
Journal ArticleDOI
High temperature Pt Schottky diode gas sensors on n-type GaN
TL;DR: In this article, the characteristics of Pt Schottky diodes on n-type GaN in hydrogen and propane are reported for the first time, and they are able to detect hydrogen from 200-400°C.
References
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Journal ArticleDOI
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
Robert F. Davis,Zlatko Sitar,B.E. Williams,H. S. Kong,H. J. Kim,John W. Palmour,John A. Edmond,J. Ryu,Jeffrey T. Glass,C. H. Carter +9 more
TL;DR: In this paper, it was shown that monocrystalline diamond and silicon carbide can be achieved at or below 1 atm total pressure and at a temperature T, which is the highest operating temperature ever achieved for a field effect device.
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Physics with catalytic metal gate chemical sensors
TL;DR: The use of chemical sensors, i.e., devices which can continuously monitor the concentration of a given species, is rapidly growing as mentioned in this paper, and there are several reasons for this.
Journal ArticleDOI
Thermally assisted tunneling: CH 4 dissociation on Pt(111)
TL;DR: It is proposed here that a new phenomenon, thermally assisted tunneling, caused by a coupling of the tunnel barrier to the lattice, resolves this controversy about the mechanism for the dissociation of CH 4 at metal surfaces.
Journal ArticleDOI
Dissociative chemisorption of methane on Pt(111)
TL;DR: In this article, a supersonic molecular beam was used to measure the initial dissociative sticking probability of a hydrogen atom on clean clean Pt(111) for a fixed normal incident kinetic energy of 68 kJ/mol.
Journal ArticleDOI
Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin films
TL;DR: In this article, high-purity monocrystalline β-SiC films have been chemically deposited on Si(100) and αSiC(0001) at 1660-1823 K and 0.1 MPa using SiH 4 and C 2 H 4 carried in hydrogen.