Journal ArticleDOI
Hydrogen sensitive GA2O3 Schottky diode sensor based on SiC
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TLDR
In this paper, a Ga 2 O 3/SiC metal-reactive insulator-silicon carbide (MRISiC) sensor with spin-coating was developed for hydrogen gas sensitivity.Abstract:
Pt/Ga 2 O 3 /SiC metal-reactive insulator-silicon carbide (MRISiC) devices operated as Schottky diodes were characterized for their hydrogen gas sensitivity. The sensors have been tested towards different concentrations of hydrogen gas as a function of operating temperature. This study shows advantages of this structure compared to the pure thin film (90 nm) Ga 2 O 3 conductometric sensor. The Ga 2 O 3 thin films were prepared by the sol–gel process and deposited onto the transducers by spin-coating. For both types of sensors, the operating temperature was controlled by a micro heater located beneath the structure. It was found that cycling the ambient from synthetic air (SA) to 1% H 2 in SA air produces repeatable changes of the forward voltage at fixed forward bias. At high temperature (above 500 °C), the response time of the sensors decreases. Furthermore, the sensor shows remarkable stability and the decrease in bias voltage subject to 1% H 2 was 210 mV.read more
Citations
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Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Fabrication of a SnO2 Nanowire Gas Sensor and Sensor Performance for Hydrogen
TL;DR: In this article, a self-assembly SnO2 nanowire gas sensor has been fabricated on Cd−Au comb-shaped interdigitating electrodes using thermal evaporation of the mixed powders of SnO 2 and active carbon.
Journal ArticleDOI
Metal oxide hydrogen, oxygen, and carbon monoxide sensors for hydrogen setups and cells
TL;DR: In this paper, the authors present a general idea of achievements in the field of semiconductor sensors for hydrogen, oxygen, and carbon oxide sensors made of metal oxides, which allows controlling the content of these gases in operation of many hydrogen setups, cells and devices.
Journal ArticleDOI
Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
TL;DR: In this article, a deep Ultraviolet (UV) photodiode was fabricated using a heterojunction between β-Ga2O3 and 6H-SiC with a band gap of 3.02
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O2 and CO sensing of Ga2O3 multiple nanowire gas sensors
TL;DR: In this paper, a Ga2O3-based gas sensor was used to detect O2 and CO gases in a working temperature range of 100-500°C with a peak response at 300-400°C for O2 gas and 200-400-degree C for CO gas.
References
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Journal ArticleDOI
A hydrogen−sensitive MOS field−effect transistor
TL;DR: In this paper, an MOS transistor with 10−nm silicon dioxide as gate insulator and 10 −nm palladium as gate electrode was fabricated and the threshold voltage of this transistor was found to be a function of the partial pressure of hydrogen in the ambient atmosphere.
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Micromirror optical-fiber hydrogen sensor
TL;DR: In this paper, a new hydrogen sensor was reported that operates by measuring changes in the reflectivity of thin palladium films deposited on the end of an optical fiber when exposed to hydrogen gas.
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High-temperature hydrogen sensor based on stabilized zirconia and a metal oxide electrode
TL;DR: In this paper, a zirconia-based electrochemical device attached with an oxide electrode was developed for the detection of H2 in air at elevated temperature, and the EMF value of the device was almost linear with the logarithm of the H2 concentration.
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Gallium oxide thin films: A new material for high-temperature oxygen sensors
TL;DR: In this article, Ga2O3 thin films were used as catalytically inactive oxygen sensors, and the response times were in the range of seconds, and their stable oxygen sensitivity was based on a bulk effect independent of the film thickness.
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Investigation of the oxygen gas sensing performance of Ga2O3 thin films with different dopants
TL;DR: In this paper, the oxygen gas sensing performance of Ga2O3 semiconducting thin films doped with Ce, Sb, W and Zn was investigated and shown to be promising for oxygen sensing applications.