Journal ArticleDOI
InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth
Q. Xie,Ping Chen,Anupam Madhukar +2 more
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In this article, the impact of the strain fields associated with partially strain relaxed InAs islands on the evolution of the growth front profile during subsequent GaAs capping layer growth as a function of growth temperature is examined via placement of very thin AlGaAs marker layers.Abstract:
The impact of the strain fields associated with partially strain relaxed InAs islands on GaAs (100) on the evolution of the growth front profile during subsequent GaAs capping layer growth as a function of the growth temperature is examined via placement of very thin AlGaAs marker layers. Transmission electron microscope studies reveal the presence of strain dominated atom migration away from the islands over dynamically evolving length scales of ∼100–400 A at higher growth temperature whereas at lower growth temperature such an effect is minimal. Anisotropy in the length scale of impact between the [011] and [011] directions is observed. Estimates based upon a suitably adapted formulation of the classical theory of grain growth shows the mass transport to be dominantly strain rather than surface curvature driven.read more
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Intermixing and shape changes during the formation of InAs self-assembled quantum dots
Jorge M. Garcia,Gilberto Medeiros-Ribeiro,K. H. Schmidt,T. Ngo,J.-L. Feng,Axel Lorke,Jörg P. Kotthaus,Pierre Petroff +7 more
TL;DR: In this article, the initial stages of GaAs overgrowth over self-assembled coherently strained InAs quantum dots (QDs) are studied, and it is shown that surface QDs with 5 nm or more GaAs are remarkably insensitive to surface recombination effects.
Journal ArticleDOI
Size and shape engineering of vertically stacked self-assembled quantum dots
TL;DR: In this article, a new procedure for the growth of stacked self-assembled quantum dot layers is described, where the main effect is to convert the quantum dot population into a population of quantum disks of approximately equal height.
Journal ArticleDOI
Self-organized growth of quantum-dot structures
TL;DR: In this paper, a review of the current developments in the field of self-assembled semiconductor quantum-dot structures during epitaxial growth of lattice mismatched systems is presented.
Journal ArticleDOI
Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
Go Yusa,Hiroyuki Sakaki +1 more
TL;DR: In this article, the trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures.
References
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Journal ArticleDOI
Diffusional Viscosity of a Polycrystalline Solid
TL;DR: In this article, it is suggested that mosaic boundaries and boundaries between grains of nearly the same orientation may not serve as sources or sinks of the diffusion currents, in which case the creep rate will depend only on the configuration of grain boundaries having a sizable orientation differen...
Journal ArticleDOI
Dislocation-free Stranski-Krastanow growth of Ge on Si(100).
D. J. Eaglesham,M. Cerullo +1 more
TL;DR: It is shown that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free, and the limiting critical thickness of coherent SK islands is shown to be higher than that for 2D growth.
Journal ArticleDOI
Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
TL;DR: In this paper, the 2D-3D growth mode transition during the initial stages of growth of highly strained InGaAs on GaAs is used to obtain quantum-sized dot structures.
Journal ArticleDOI
On the stability of surfaces of stressed solids
TL;DR: In this article, a simple linear stability analysis is presented which demonstrates that the nominally flat surface of an elastically stressed body is unstable with respect to the growth of perturbations with wavelengths greater than a critical wavelength.
Journal ArticleDOI
Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
TL;DR: In this paper, the authors show that the first quantum dots formed are in the quantum size range (height 30 A, half-base 120 A), that the dispersion on their sizes is remarkably low (±10%), and that they are located fairly regularly (interdot distance 600 A).