InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
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In this paper, the tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode.Abstract:
InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10−2 Ω cm2, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10−4 Ω cm2 was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.read more
Citations
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Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
John T. Leonard,Erin C. Young,Benjamin P. Yonkee,Daniel A. Cohen,Tal Margalith,Steven P. DenBaars,James S. Speck,Shuji Nakamura +7 more
TL;DR: In this article, a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) intracavity contact is compared to an equivalent VCSEL with a tin-doped indium oxide (ITO) intra-convity contact.
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Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes
TL;DR: Through the monolithic integration of p- GaN up and p-GaN down nanowire LED structures on the same substrate, it is demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities of applied voltage.
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Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
Yuewei Zhang,Sriram Krishnamoorthy,Jared M. Johnson,Fatih Akyol,Andrew A. Allerman,Michael W. Moseley,Andrew M. Armstrong,Jinwoo Hwang,Siddharth Rajan +8 more
TL;DR: In this paper, an efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters using polarization-engineered tunnel junctions to enhance tunneling probability by several orders of magnitude over a PN homojunction.
Journal ArticleDOI
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Yuewei Zhang,Sriram Krishnamoorthy,Jared M. Johnson,Fatih Akyol,Andrew A. Allerman,Michael W. Moseley,Andrew M. Armstrong,Jinwoo Hwang,Siddharth Rajan +8 more
TL;DR: In this article, a non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction was demonstrated.
Journal ArticleDOI
Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm
Songrui Zhao,Sharif Md. Sadaf,Srinivas Vanka,Yongjiang Wang,Roksana Tonny Rashid,Zetian Mi,Zetian Mi +6 more
TL;DR: In this article, the authors reported that with the use of the n+-GaN/Al/p+-AlGaN tunnel junction (TJ), the device resistance was reduced by one order of magnitude, and the light output power was increased by two orders of magnitude.
References
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Determination of wurtzite GaN lattice polarity based on surface reconstruction
Arthur R. Smith,Randall M. Feenstra,David W. Greve,M.-S. Shin,Marek Skowronski,Jörg Neugebauer,John E. Northrup +6 more
TL;DR: In this paper, the authors identify two categories of reconstructions occurring on wurtzite GaN surfaces, the first associated with the N face, and the second associated with Ga face, (0001).
Journal ArticleDOI
Polarization-engineered GaN/InGaN/GaN tunnel diodes
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TL;DR: In this paper, the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage was reported.
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CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
TL;DR: In this article, a current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device.
Journal ArticleDOI
Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.
TL;DR: In this article, an interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields, which has applications for zero-bias rectification and mm-wave imaging.
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Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
Jinn-Kong Sheu,J.M. Tsai,Shei Shih-Chang,Wei-Chih Lai,Ten-Chin Wen,C.H. Kou,Yan-Kuin Su,Shoou-Jinn Chang,G.C. Chi +8 more
TL;DR: In this article, a Si-doped In/sub 0.23/N/GaN short-period superlattice (SPS) tunneling contact was grown by metalorganic vapor phase epitaxy.