Journal ArticleDOI
Introducing atomic layer epitaxy for the deposition of optical thin films
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TLDR
In this paper, the authors used the Atomic Layer epitaxy (ALE) for the preparation of dielectric multilayer structures for optical applications, and compared the measured transmittance and reflectance spectra with those calculated for the ideal structures.About:
This article is published in Thin Solid Films.The article was published on 1996-11-30. It has received 99 citations till now. The article focuses on the topics: Atomic layer epitaxy & Thin film.read more
Citations
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Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
TL;DR: Puurunen et al. as discussed by the authors summarized the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD.
Patent
Sequential chemical vapor deposition
TL;DR: In this article, the authors proposed a method for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve.
Book ChapterDOI
Atomic layer deposition
Mikko Ritala,Markku Leskelä +1 more
TL;DR: The atomic layer deposition (ALD) method as discussed by the authors is a chemical gas phase thin film deposition method based on alternate saturative surface reactions, in which the source vapors are pulsed into the reactor alternately, one at a time, separated by purging or evacuation periods.
Journal ArticleDOI
Atomic layer epitaxy—a valuable tool for nanotechnology?
Mikko Ritala,Markku Leskelä +1 more
TL;DR: Atomic layer epitaxy (ALE) is a surface controlled, self-limiting method for depositing thin films from gaseous precursors as discussed by the authors, and its potentials for nanotechnology are introduced.
References
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Book
The Materials Science of Thin Films
TL;DR: A review of materials science can be found in this paper, where the authors describe the properties of thin-film materials and their applications in the following categories: electrical and magnetic properties, optical properties, and material properties.
Journal ArticleDOI
Atomic layer epitaxy
TL;DR: Atomic layer epitaxy (ALE) is a surface-controlled process for thin film manufacturing, for formation of atomically controlled surfaces and for epitaxial growth of single crystals.
Journal ArticleDOI
Growth of titanium dioxide thin films by atomic layer epitaxy
TL;DR: In this paper, a TiCl4 and water as reactants were used to grow a thin titanium dioxide thin film over a temperature range 150-600 °C in order to study the effects of temperature on the growth rate.
Book
Coatings on glass
TL;DR: The history composition, structure and properties of inorganic and organic glasses nature of a surface cleaning of substrate surfaces glass and thin films film formation methods film thickness properties of thin films applications of coatings on glass.
Journal ArticleDOI
Ion-based methods for optical thin film deposition
TL;DR: The optical properties of dielectric oxide films SiO2, Al2O3, TiO2 and ZrO2 produced by ion-based techniques have been reviewed in this paper.