Journal ArticleDOI
Is the Cu/Zn disorder the main culprit for the voltage deficit in kesterite solar cells?
S. Bourdais,Christophe Chone,Bruno Delatouche,Alain Jacob,Gerardo Larramona,Camille Moisan,Alain Lafond,Fabrice Donatini,Fabrice Donatini,Germain Rey,Susanne Siebentritt,Aron Walsh,Aron Walsh,Gilles Dennler +13 more
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TLDR
In this article, the role of anionic (S/Se) distribution and cationic (Cu/Zn) disorder on the open-circuit voltage (Voc) and the ultimate photovoltaic performance of kesterite devices is clarified.Abstract:
Photovoltaic thin film solar cells based on kesterite Cu2ZnSn(Sx,Se1–x)4 compounds (CZTSSe) have reached >12% sunlight-to-electricity conversion efficiency. This is still far from the >20% record devices known in Cu(In1–y,Gay)Se2 and CdTe parent technologies. A selection of >9% CZTSSe devices reported in the literature is examined to review the progress achieved over the past few years. These devices suffer from a low open-circuit voltage (Voc) never better than 60% of the Voc max, which is expected from the Shockley-Queisser radiative limit (S-Q limit). The possible role of anionic (S/Se) distribution and of cationic (Cu/Zn) disorder on the Voc deficit and on the ultimate photovoltaic performance of kesterite devices, are clarified here. While the S/Se anionic distribution is expected to be homogeneous for any ratio x, some grain-to-grain and other non-uniformity over larger area can be found, as quantified on our CZTSSe films. Nevertheless, these anionic distributions can be considered to have a negligible impact on the Voc deficit. On the Cu/Zn order side, even though significant bandgap changes (>10%) can be observed, a similar conclusion is brought from experimental devices and from calculations, still within the radiative S-Q limit. The implications and future ways for improvement are discussed.read more
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Journal ArticleDOI
Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review
Sergio Giraldo,Zacharie Jehl,Marcel Placidi,Victor Izquierdo-Roca,Alejandro Pérez-Rodríguez,Alejandro Pérez-Rodríguez,Edgardo Saucedo +6 more
TL;DR: Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions and doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite.
Journal ArticleDOI
Point defect engineering in thin-film solar cells
TL;DR: In this paper, the evolution in the understanding of point defect behavior from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices, is reviewed.
Journal ArticleDOI
Beyond 11% Efficient Sulfide Kesterite Cu2ZnxCd1–xSnS4 Solar Cell: Effects of Cadmium Alloying
Chang Yan,Kaiwen Sun,Jialiang Huang,Steve Johnston,Fangyang Liu,Binesh Puthen Veettil,Kaile Sun,Aobo Pu,Fangzhou Zhou,John A. Stride,Martin A. Green,Xiaojing Hao +11 more
TL;DR: In this paper, a beyond 11% efficient Cd-alloyed CZTS solar cell is achieved, and the effects of Cdalloying and mechanism underpinning the performance improvement have been investigated.
Journal ArticleDOI
Defect Engineering in Multinary Earth-Abundant Chalcogenide Photovoltaic Materials
TL;DR: In this article, a review of recent efforts targeting accurate identification and engineering of anti-site disorder in kesterite-based CZTSSe are considered, in an effort to develop promising pathways to avoid antisite disordering and associated band tailing in future highperformance earth-abundant photovoltaic technologies.
Journal ArticleDOI
Engineering of interface band bending and defects elimination via a Ag-graded active layer for efficient (Cu,Ag)2ZnSn(S,Se)4 solar cells
Yafang Qi,Dongxing Kou,Wen-Hui Zhou,Zhengji Zhou,Qingwen Tian,Yuena Meng,Xin-Sheng Liu,Zuliang Du,Sixin Wu +8 more
TL;DR: In this paper, a V-shaped Ag-grained structure with a higher Ag content on both the back and front surfaces of the (Cu,Ag)2ZnSn(S,Se)4 (CAZTSSe) layer was achieved.
References
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Journal ArticleDOI
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
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Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
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Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance
Stefaan De Wolf,Jakub Holovsky,Soo-Jin Moon,Philipp Löper,Bjoern Niesen,Martin Ledinsky,Martin Ledinsky,F.-J. Haug,Jun-Ho Yum,Christophe Ballif +9 more
TL;DR: Using highly sensitive photothermal deflection and photocurrent spectroscopy, the absorption spectrum of CH3NH3PbI3 perovskite thin films at room temperature is measured, finding a high absorption coefficient with particularly sharp onset and a compositional change of the material.
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Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers.
TL;DR: The calculated properties explain the experimental observation that Cu poor and Zn rich conditions result in the highest solar cell efficiency, as well as suggesting an efficiency limitation in Cu2ZnSn(S,Se)4 cells when the S composition is high.