Journal ArticleDOI
Large area InN terahertz emitters based on the lateral photo-Dember effect
Jan Wallauer,Christian Grumber,Vladimir Polyakov,Robert Iannucci,Volker Cimalla,Oliver Ambacher,Markus Walther +6 more
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TLDR
In this paper, a large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented, which is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate.Abstract:
Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room for improvement by optimizing the masking structures.read more
Citations
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Two-dimensional materials toward Terahertz optoelectronic device applications
Zhe Shi,He Zhang,Karim Khan,Rui Cao,Ye Zhang,Chunyang Ma,Ayesha Khan Tareen,Yuanfei Jiang,Mingxing Jin,Han Zhang +9 more
TL;DR: In this article, the authors reviewed the recent advances of research into 2D materials based Terahertz (THz) optoelectronic devices and provided a comprehensive review of their applications.
Journal ArticleDOI
Two-dimensional materials toward Terahertz optoelectronic device applications
TL;DR: In this article , the authors reviewed the recent advances of research into 2D materials based Terahertz (THz) optoelectronic devices and provided a comprehensive review of their applications.
Journal ArticleDOI
Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates
Huiqiang Liu,Zuxin Chen,Sheng Chu,Xuechen Chen,Min Liu,Nan Peng,Guang Chu,Feng Huang,Rufang Peng +8 more
TL;DR: In this article, a novel, high performance terahertz emitting structure consisting of nano-engineered indium nitride (InN) micro/nanopyramid arrays on a single crystal zinc oxide (ZnO) substrate was reported.
Journal ArticleDOI
Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection
Shyam Murli Manohar Dhar Dwivedi,Shubhro Chakrabartty,Hemant Ghadi,Punam Murkute,Vinayak Chavan,Subhananda Chakrabarti,Satyaban Bhunia,Aniruddha Mondal +7 more
TL;DR: In this article, the synthesis of Indium Nitride (InN) Nanopines (NПs) array on Si substrate using oblique angle deposition (OAD) technique was demonstrated.
Journal ArticleDOI
Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate
TL;DR: In this article, a PAMBE-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering was used to demonstrate near infrared electroluminescence from a p-NiO/n-InN/N-SiC heterojunction light-emitting diode.
References
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Journal ArticleDOI
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke,Momme Winkelnkemper,Abdallah Qteish,Dieter Bimberg,Jörg Neugebauer,Matthias Scheffler +5 more
TL;DR: In this paper, the authors derived consistent sets of band parameters such as band gaps, crystal field splittings, band-gap deformation potentials, effective masses, and Luttinger and EP parameters for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation.
Journal ArticleDOI
Simulation of terahertz generation at semiconductor surfaces
TL;DR: In this article, a three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation, and the authors show that a magnetic field enhances THz emission by rotating the emitting dipole with respect to the sample surface, leading to an increased coupling of radiation through the surface.
Journal ArticleDOI
THz electromagnetic emission by coherent infrared-active phonons
TL;DR: A displacive excitation mechanism closely related to the Frank-Condon principle in molecules accounts for the generation of coherent optical phonons in narrow-band-gap materials like tellurium and high-temperature superconductors.
Journal ArticleDOI
Terahertz radiation from InAs induced by carrier diffusion and drift
TL;DR: In this article, the drift-diffusion equation (DDE) is used in the study of carrier drift and diffusion as well as subsequent terahertz radiation from InAs wafers.
Journal ArticleDOI
Terahertz emission from lateral photo-Dember currents
Gregor Klatt,D. Stephan,F. Hilser,Raphael Gebs,Albrecht Bartels,Milan Fischer,Jérôme Faist,Thomas Dekorsy +7 more
TL;DR: In this paper, the photo-Dember effect is used to generate strong carrier gradients parallel to the surface of a simple semiconductor surface, which can be scaled up so that multiple phase coherent photo-dember currents contribute to the THz emission.