Journal ArticleDOI
Lateral motion of SiGe islands driven by surface-mediated alloying.
U. Denker,Armando Rastelli,Mathieu Stoffel,J Tersoff,Georgios Katsaros,Giovanni Costantini,Klaus Kern,Neng Yun Jin-Phillipp,David E Jesson,Oliver G. Schmidt +9 more
TLDR
The island motion is explained by asymmetric surface-mediated alloying by leaving one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side while becoming larger and more dilute.Abstract:
SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute.read more
Citations
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Journal ArticleDOI
Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography
Armando Rastelli,Mathieu Stoffel,Angelo Malachias,Tsvetelina Merdzhanova,Georgios Katsaros,Klaus Kern,T. H. Metzger,Oliver G. Schmidt +7 more
TL;DR: Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively determine the full three-dimensional (3D) composition profiles of single strained SiGe/Si(001) islands.
Journal ArticleDOI
Phase-field-crystal dynamics for binary systems: Derivation from dynamical density functional theory, amplitude equation formalism, and applications to alloy heterostructures.
TL;DR: Results of a sample application to the study of surface segregation and interface intermixing in alloy heterostructures and strained layer growth are presented, showing the effects of different atomic sizes and mobilities of alloy components.
Journal ArticleDOI
Thermodynamic theory of growth of nanostructures
TL;DR: In this paper, a review of thermodynamic theoretical treatments of the growth of nanostructures including QDs by epitaxy, QRs by droplet epitaxy and nanowires by the vapor-liquid-solid (VLS) mechanism is presented.
Journal ArticleDOI
Analysis of strain and intermixing in single-layer Ge ∕ Si quantum dots using polarized Raman spectroscopy
Alexander V. Baranov,Anatoly V. Fedorov,Tatiana S. Perova,R. A. Moore,Vy Yam,Daniel Bouchier,V. Le Thanh,Kevin Berwick +7 more
TL;DR: The built-in strain and composition of as-grown and Si-capped single layers of Ge/Si dots grown at various temperatures 460-800 ° C are studied by a comparative analysis of the polarized Raman spectra of the dots as discussed by the authors.
Journal ArticleDOI
Compositional mapping of semiconductor quantum dots and rings
Giorgio Biasiol,Stefan Heun +1 more
TL;DR: In this paper, the authors review the extensive experimental work on the compositional mapping of semiconductor quantum dots and rings and discuss some general trends in this area. But they do not provide a detailed review of the experimental results.
References
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Book
Epitaxy of Nanostructures
TL;DR: In this paper, the authors describe the energy of a strained disk with perturbed shape and its elasticity against shape perturbations, as well as the interaction between two strained disks.
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