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Journal ArticleDOI

Low temperature thermopower and electrical conductivity in highly conductive CuInO2 thin films

TLDR
In this article, a detailed study on low temperature (6-300 K) electrical conductivity and Seebeck coefficient on copper indium oxide polycrystalline thin films deposited on soda lime glass substrates by a reactive evaporation method is presented.
Abstract
This is the first report on the detailed study on low temperature (6–300 K) electrical conductivity and Seebeck coefficient on copper indium oxide polycrystalline thin films deposited on soda lime glass substrates by a reactive evaporation method. These films, characterized using various experimental techniques, show the highest electrical conductivity (20 to 125 S cm−1) reported to date as well as n- and p- type conductivity. The electrical conductivity mechanisms, based on Mott's, Seto's and Arrhenius models, in different temperature regimes, comprise of variable range hopping, grain boundary effect and activated thermal conduction. Most interestingly, the thin films manifest a high thermoelectric power factor and absorption in the UV region, indicating their potential in thermoelectric and UV energy conversion device fabrication, respectively.

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Journal ArticleDOI

Tin Incorporation in AgInSe2 Thin Films: Influence on Conductivity

TL;DR: In this article, a detailed analysis of the low temperature conductivity of AgInSe2 (AIS) and tin incorporated AIS:Sn is presented, which is attributed to donor and acceptor defect level formation, which has pushed the Fermi levels to ∼9 meV below the conduction band edge in n-type films and ∼3 meV above the valence band edge.
Journal ArticleDOI

A load-based thermopower measurement setup in the temperature range of 5–330 K

TL;DR: In this paper, the authors developed an automated precision load-based measurement setup for thermoelectric power (S) of different types of samples in the temperature range of 5 −330 K. This setup takes nearly 4 h for each run, and the typical error is within 5%.
Journal ArticleDOI

Low temperature carrier transport mechanism and photo-conductivity of WSe2

TL;DR: In this paper, the electrical-transport and temperature-dependent photoconductivity in tungsten diselenide (WSe2) thin films were investigated using different models.
Journal ArticleDOI

Low temperature electrical conductivity and seebeck coefficient of nanostructured CuSe thin films with Ga addition

TL;DR: In this paper, electrical conductivity and Seebeck coefficient of nanostructured Ga added p-type CuSe thin films are investigated in the temperature range 6-300 k. The films were prepared by vacuum co-evaporation method and characterized by various tools like X-ray diffraction, scanning electron microscopy and energy dispersive analysis of X-rays, for their structural, morphological and compositional studies.
Posted Content

A New Load-based Thermopower Measurement Setup in the Temperature Range of 5 - 330 K

TL;DR: This is a report on the development of an automated precision load-based measurement setup for thermoelectric power (S) of different types of samples in the temperature range of 5-330 K.
References
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Journal ArticleDOI

The electrical properties of polycrystalline silicon films

TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
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Transparent conductors—A status review

TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
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P-type electrical conduction in transparent thin films of CuAlO2

TL;DR: In this paper, the authors describe a strategy for identifying oxide materials that should combine p-type conductivity with good optical transparency, and illustrate the potential of this approach by reporting the properties of thin films of CuAlO2, a transparent oxide having room-temperature p- type conductivity up to 1'S'cm−1.
Journal ArticleDOI

First-principles study of native point defects in ZnO

TL;DR: In this paper, the first principles pseudopotential method was used to determine the electronic structure, atomic geometry, and formation energy of native point defects in ZnO and showed that both the Zn and O vacancies are the relevant defects.
Journal ArticleDOI

Criteria for Choosing Transparent Conductors

Roy G. Gordon
- 01 Aug 2000 - 
TL;DR: In this article, the physical properties of these materials are reviewed and compared, and a comparison of their properties can be found in Section 5.2.1] and Section 6.1.
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