Journal ArticleDOI
Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN
TLDR
PLE spectra obtained under UV excitation in the spectral range 200–400 nm, reveal two or three bands, possible assignments of observed exoitation bands are discussed.About:
This article is published in Microelectronics Journal.The article was published on 2005-03-01. It has received 42 citations till now. The article focuses on the topics: Photoluminescence excitation & Photoluminescence.read more
Citations
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Journal ArticleDOI
Red, green and blue (RGB) emission doped Y3Al5O12 (YAG) phosphors prepared by non-hydrolytic sol-gel route
Paula F.S. Pereira,Marcela G. Matos,Lilian R. Avila,Evelisy Cristina de Oliveira Nassor,Alexandre Cestari,Katia J. Ciuffi,Paulo S. Calefi,Eduardo J. Nassar +7 more
TL;DR: In this article, an evolutionary optimization process involving combination chemistry was employed in an attempt to develop Y3Al5O12 (YAG), which consisted the doping of the YAG host with appropriate amounts of red (R), green (G), and blue (B) dopants in a single layer, for use in tricolor white light.
Journal ArticleDOI
Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN
TL;DR: In this paper, the authors investigated the luminescent properties of Pr-, Eu-, Tb- and Tm-implanted AlN thin films at temperature in the range 9 − 830 K.
Journal ArticleDOI
Anomalous Eu layer doping in Eu, Si co-doped aluminium nitride based phosphor and its direct observation
TL;DR: In this article, Si co-doped AlN is analyzed to elucidate the luminescent Eu center's location and the role of codopant Si in a wurtzite AlN lattice as there is not enough space for a large Eu cation.
Journal ArticleDOI
Location of lanthanide impurity energy levels in the III–V semiconductor AlxGa1−xN (0 ⩽ x ⩽ 1)
Pieter Dorenbos,E. van der Kolk +1 more
TL;DR: In this paper, the 4f ground state energy for each divalent and trivalent lanthanide relative to the valence and conduction band was established using spectroscopic data.
Journal ArticleDOI
Visible photoluminescence in polycrystalline terbium doped aluminum nitride (Tb:AlN) ceramics with high thermal conductivity
TL;DR: In this article, the authors present a method based on current activated pressure assisted densification for the fabrication of high thermal conductivity photoluminescent (PL) materials: rare earth doped polycrystalline bulk aluminum nitride.
References
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Journal ArticleDOI
Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
Andrew J. Steckl,John Zavada +1 more
TL;DR: Gregorkiewicz et al. as discussed by the authors reviewed the status and prospects of obtaining stimulated emission in Si:Er and reviewed the potential of using widebandgap semiconductors as hosts for rare earth doping.
Journal ArticleDOI
Visible cathodoluminescence of GaN doped with Dy, Er, and Tm
TL;DR: In this paper, the authors reported the observation of visible cathodoluminescence of rare-earth Dy, Er, and Tm implanted in GaN, at atmospheric pressure to recover implantation damages and activated the rare earth ions.
Journal ArticleDOI
Visible emission from AlN doped with Eu and Tb ions
TL;DR: In this article, visible cathodoluminescence (CL) from AlN thin films grown on sapphire substrate by molecular beam epitaxy and doped by implantation with Eu3+ and Tb3+ ions was observed from samples annealed at 1100 °C for 0.5 h in N2 ambient.
Journal ArticleDOI
Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering
Wojciech M. Jadwisienczak,H. J. Lozykowski,F. Perjeru,Hong Chen,Martin E. Kordesch,Ian G. Brown +5 more
TL;DR: In this article, visible cathodoluminescence (CL) of Tb ions implanted into amorphous AlN films produced by sputtering was observed in the spectral range from 350 to 750 nm and observed over the temperature range from 7 to 330 K due to the transitions from 5D3 and 5D4 levels toward the 5FJ (J=2 to 6) multiplets.
Journal ArticleDOI
Photoluminescence study of Er-doped AlN
X. Wu,Uwe Hommerich,J. D. MacKenzie,C. R. Abernathy,Stephen J. Pearton,Robert G. Wilson,Robert N. Schwartz,J. M. Zavada +7 more
TL;DR: In this paper, a photoluminescence (PL) study of Er-doped AlN epilayer on sapphire substrate was presented, which showed that Er3+ is excited through a photo-carrier mediated process.