Journal ArticleDOI
Luminescence and structural study of porous silicon films
Ya-Hong Xie,William L. Wilson,Frances M. Ross,J. A. Mucha,Eugene A. Fitzgerald,John M. MaCaulay,Timothy D. Harris +6 more
TLDR
In this article, the luminescence properties of 3 μm thick, strongly emitting, and highly porous silicon films were studied using a combination of photoluminescence, transmission electron microscopy, and Fourier transform infrared spectroscopy.Abstract:
The luminescence properties of 3 μm thick, strongly emitting, and highly porous silicon films were studied using a combination of photoluminescence, transmission electron microscopy, and Fourier transform infrared spectroscopy. Transmission electron micrographs indicate that these samples have structures of predominantly 6–7 nm size clusters (instead of the postulated columns). In the as‐prepared films, there is a significant concentration of Si—H bonds which is gradually replaced by Si—O bonds during prolonged aging in air. Upon optical excitation these films exhibit strong visible emission peaking at ≊690 nm. The excitation edge is shown to be emission wavelength dependent, revealing the inhomogeneous nature of both the initially photoexcited and luminescing species. The photoluminescence decay profiles observed are highly nonexponential and decrease with increasing emission energy. The 1/e times observed typically range from 1 to 50 μs. The correlation of the spectral and structural information suggest...read more
Citations
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Journal ArticleDOI
The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Journal ArticleDOI
Porous silicon: a quantum sponge structure for silicon based optoelectronics
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
Journal ArticleDOI
Quantum confinement in size-selected, surface-oxidized silicon nanocrystals.
TL;DR: Size-selective precipitation and size-exclusion chromatography cleanly separate the silicon nanocrystals from larger crystallites and aggregates and provide direct evidence for quantum confinement in luminescence.
Journal ArticleDOI
Electronic structure and optical properties of silicon crystallites: Application to porous silicon
TL;DR: In this article, the electronic structure of spherical silicon crystallites containing up to 2058 Si atoms was calculated and a variation of the optical band gap with respect to the size of the crystallites was predicted in very good agreement with available experimental results.
Journal ArticleDOI
FTIR Study of the Oxidation of Porous Silicon
TL;DR: In this paper, the oxidation of hydrogen-terminated porous silicon surfaces produced by electrochemical etching has been studied using transmission FTIR spectroscopy and two reactions are observed.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Journal ArticleDOI
Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
Book
Long-wavelength semiconductor lasers
TL;DR: In this paper, the current status and future applications of lightwave transmission of longwavelength semiconductor lasers emitting near 1.3 and 1.55-mu m are described, and bit-error-rate curves for a transmission experiment at 8 Gb/s over 76 km of fiber are shown.